Organic electroluminescent device and manufacturing method therefor
An electroluminescent device, organic technology, applied in the direction of organic semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effect of enhanced characteristics, excellent resistance, and improved interface characteristics
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Embodiment 1
[0130] Preparation of copper acetate and Mo(CO) in a weight ratio of 0.8:99.2 6 A solution dissolved in cyclohexanone at a concentration of 4% by weight. The ITO-coated glass substrate was washed sequentially with water and isopropanol, and then the mixed solution was spin-coated onto the ITO-deposited base material for 30 seconds at 1000 rpm. The obtained thin film was subjected to heat treatment at 200° C. for 15 minutes in an oxygen atmosphere, thereby forming a hole injection layer having a very uniform thickness of 30 nm.
[0131] A hole transport layer with a thickness of 45 nm was formed on top of the hole injection layer by using 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB).
[0132] An electron blocking layer with a thickness of 15 nm was formed on top of the hole transport layer. BH of the following chemical formula as a blue fluorescent host was doped with BD as a blue dopant at a weight ratio of 95:5 on the electron blocking layer, thereby forming a light...
Embodiment 2
[0137] The device was fabricated in the same manner as in Example 1, except that NaNO in a weight ratio of 5:95 was used 3 and MoO 2 (acac) 2 The hole injection layer was prepared by dissolving in ethylene glycol monomethyl ether at a concentration of 4 wt %, and coating the resulting solution on the base material deposited with ITO at 1000 rpm, followed by heat treatment in an oxygen atmosphere. At this time, the thickness of the hole injection layer was 30 nm. The characteristics of the device are shown in Table 1.
Embodiment 3
[0139] A device was fabricated in the same manner as in Example 1, except that AgNO was added in a weight ratio of 0.5:99.5 3 and MoO 2 (acac) 2 The hole injection layer was prepared by dissolving in ethylene glycol monomethyl ether at a concentration of 4 wt %, and coating the resulting solution on the base material deposited with ITO at 1000 rpm, followed by heat treatment in an oxygen atmosphere. At this time, the thickness of the hole injection layer was 30 nm. The characteristics of the device are shown in Table 1.
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