Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for using dual-band radio frequency plasma to deposit monocrystal diamond

A radio frequency plasma, single crystal diamond technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low deposition rate and low ionization rate

Inactive Publication Date: 2019-01-18
UNIVERSITY OF CHINESE ACADEMY OF SCIENCES
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are still problems to be solved in the deposition of diamond by radio frequency method: the use of high frequency power supply (such as 13.56MHz) is easy to excite plasma, but the skin effect is strong, and the deposition rate is very low; the use of low frequency power supply (such as 4MHz) has weak skin effect and the deposition rate There is a great improvement, but the ionization rate is low, and a large amount of sheath gas is required (J.O.Berghaus, MeasurementScience and Technology, 15(2002) 161-164)
And the current radio frequency method can only deposit polycrystalline diamond

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for using dual-band radio frequency plasma to deposit monocrystal diamond
  • Method for using dual-band radio frequency plasma to deposit monocrystal diamond
  • Method for using dual-band radio frequency plasma to deposit monocrystal diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The size of the single crystal diamond substrate is 5mm×5mm×1mm, and the surface is a (400) plane. Use mixed sulfuric acid and nitric acid (5:1) to heat to 300 degrees Celsius to clean for 15 minutes, then use deionized water and alcohol to ultrasonically clean for 10 minutes, and blow dry. Placed in a dual-frequency radio frequency plasma deposition equipment, evacuate to below 10Pa, and pass through Ar and H 2 , use high frequency to excite plasma, low frequency to increase plasma energy density, and increase pressure to 7kPa. After the plasma stabilized, add CH 4 . Ar flow 3.5slm, H 2 Flow 1.3slm, CH 4 Flow 20sccm. The deposition temperature was 700°C. After 140 hours of deposition, sample A was obtained.

Embodiment 2

[0018] The size of the single crystal diamond substrate is 5mm×5mm×1mm, and the surface is a (400) plane. Use mixed sulfuric acid and nitric acid (5:1) to heat to 300 degrees Celsius to clean for 15 minutes, then use deionized water and alcohol to ultrasonically clean for 10 minutes, and blow dry. Placed in a dual-frequency radio frequency plasma deposition equipment, evacuate to below 10Pa, and pass through Ar and H 2 , use high frequency to excite plasma, low frequency to increase plasma energy density, and increase pressure to 7kPa. After the plasma stabilized, add CH 4 . Ar flow 3.5slm, H 2 Flow 1.3slm, CH 4 Flow 20sccm. The deposition temperature was 750°C. After 138 hours of deposition, sample B was obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for using dual-band radio frequency plasma to deposit monocrystal diamond, and belongs to the technical field of diamond chemical vapor deposition. The background vacuum of a deposition cavity is 0.01-10Pa; reaction gas is 2-5slm of Ar, 1-3slm of H2 and 0.5-3% of CH4 / H2; a monocrystal diamond substrate is mechanically fixed to a molybdenum deposition table, and a sample surface is 0-30mm below a plasma axis, and 0-50 distant from an outlet of a plasma generator; the reaction gas is guided in to stimulate the plasma, the high frequency power is maintained at 1-3kW, the frequency is 13.56MHz, the low frequency power is maintained at 5-15kW, and the frequency is 4MHz; the intensity of pressure is maintained at 5000-10000Pa, and the substrate temperature is 700-1100 DEG C. The plasma contains groups such as C2, CH, H<alpha>, H<beta> and Ar; the monocrystal diamond film with the surface area being 5mm*5mm and the thickness being 180-330 microns is prepared. The method has the advantage that a new route is provided for chemical vapor deposition of the monocrystal diamond.

Description

technical field [0001] The invention belongs to the technical field of diamond chemical vapor deposition, and in particular provides a method for depositing single-crystal diamond with dual-frequency radio frequency plasma, which can be applied to the deposition of single-crystal diamond. Background technique [0002] Diamond has excellent performance and has great application potential in many fields (May P W, Science, 319 (2008) 1490-1491). Its main preparation methods include high temperature and high pressure method and chemical vapor deposition method. The high temperature and high pressure method simulates the natural formation environment of diamond, and a stable technical process has been obtained so far. This method usually requires a catalyst to improve the conversion efficiency and reduce the reaction temperature and pressure, so the diamond product contains impurity elements, so the product is generally yellow. And usually obtained in the form of granules, furt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B25/00C30B29/04
CPCC30B25/00C30B29/04
Inventor 陈广超李佳君刘浩李震睿徐锴陈正佳
Owner UNIVERSITY OF CHINESE ACADEMY OF SCIENCES