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Composite structure for improving thermomechanical reliability of TSVs and manufacturing method thereof

A composite structure and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve the problems of grain boundary slip, exacerbated TSV deformation inhomogeneity, interface slip deformation, etc. problem, achieve the effect of reducing thermal deformation, improving mechanical stability and improving yield strength

Active Publication Date: 2020-04-14
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this twin structure only has a fine-grain strengthening effect in the TSV radial direction, and when heated, the oriented twin structure is more prone to interface slip deformation due to shear stress, and even grain boundary slip occurs at high temperatures
Due to the inhomogeneous stress on Cu in TSV, the texture will aggravate the inhomogeneity of TSV deformation

Method used

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  • Composite structure for improving thermomechanical reliability of TSVs and manufacturing method thereof
  • Composite structure for improving thermomechanical reliability of TSVs and manufacturing method thereof
  • Composite structure for improving thermomechanical reliability of TSVs and manufacturing method thereof

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Embodiment Construction

[0044] In the following description, the present invention is described with reference to various examples. One skilled in the art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure aspects of the various embodiments of the invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention may be practiced without these specific details. Furthermore, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0045] In this specification, reference to "one embodiment" or "the...

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Abstract

The invention discloses a TSV composite structure, comprising: a blind hole formed on a wafer; an insulating layer arranged on the inner surface of the blind hole; and a conductive metal filling the blind hole, and the conductive metal includes a The fine-grained region at the top and the coarse-grained region at the middle and bottom, the grain diameter of the fine-grained region is not larger than the grain diameter of the coarse-grained region.

Description

technical field [0001] The invention relates to the field of three-dimensional packaging, in particular to a composite structure for improving TSV thermomechanical reliability and a manufacturing method thereof. Background technique [0002] TSV (Through-Silicon-Via, through-silicon via) is a three-dimensional packaging technology that can further improve chip integration. Compared with traditional packaging technology, TSV has shorter interconnection path, smaller signal delay, and lower power consumption. It is one of the most popular research directions in semiconductor technology in recent years. Although TSV has many advantages, there are still some unfavorable factors restricting the development of TSV technology, including complicated preparation process, lack of design software and methods, thermomechanical problems caused by increased power density, key process and equipment problems, and system testing problems Wait. [0003] Among them, the thermomechanical reli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L21/48
CPCH01L21/4846H01L23/481
Inventor 姚明山王艳孙云娜丁桂甫
Owner SHANGHAI JIAOTONG UNIV