Cooler of static chuck of extreme ultraviolet photolithographic mask platform

A technology of extreme ultraviolet lithography and electrostatic chuck, applied in the field of coolers, can solve problems such as thermal distortion of mask plates, and achieve the effects of reducing thermal deformation, flexible and simple operation, and high control accuracy

Inactive Publication Date: 2007-05-30
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

[0008] Aiming at the defect of thermal distortion of the mask plate in the existing extreme ultraviolet lithography, the technical problem to be solved by the present invention is to provide a mask table electrostatic chuck cooler suitable for extreme ultraviolet lithography vacuum environment operation

Method used

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  • Cooler of static chuck of extreme ultraviolet photolithographic mask platform
  • Cooler of static chuck of extreme ultraviolet photolithographic mask platform
  • Cooler of static chuck of extreme ultraviolet photolithographic mask platform

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Embodiment Construction

[0040] FIG. 3 is a schematic diagram of the thermoelectric cooler unit 3 in the array thermoelectric cooler, and FIG. 3 shows a cooler unit with m×n=1×4 thermocouple pairs.

[0041] As shown in Figure 3, the thermocouple pair 401 connects the N-type semiconductor 304 and the P-type semiconductor 305 through the conductive metal 303 to form a thermoelectric cooler unit 3. At this time, the cold end insulating heat conducting plate 302 will absorb heat to produce a cooling effect, while the heat sink 306 will release heat, thereby generating a temperature difference between the two ends. When the material and temperature of the hot end of the thermoelectric cooler are fixed, the temperature of the cold end is only related to the magnitude of the incoming current and the properties of the material, so the cooling temperature of the cold end can be changed by changing the magnitude of the incoming current.

[0042] Fig. 4 is a schematic diagram of a specific embodiment of the arra...

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Abstract

A extreme ultraviolet photoetched mask electrostatic chuck cooler is disclosed, array thermoelectric cooler [4] is located at the bottom of the electrostatic chuck [2], the cold junction insulating heat conducting plate [302] of refrigerator is contacted with the bottom of the electrostatic chuck [2]; the mask plate [1] is attached to the top of the electrostatic chuck [2] via electrostatic absorption force. The array thermoelectric cooler [4] is constructed by several concentric square thermoelectric cooling areas from center to outer, each of the cooling areas canbe divided to several thermoelectric cooler units [3], every thermoelectric cooler unit [3] is constructed by concatenation connection of pyod couple [400] with m row, n line; the pyod couple [400] is formed by connection of a n type semi-conductor and a p type semi-conductor. The pyod couples [400] in the same thermoelectric cooler unit [3] are series-feed, the current is identical, and the temperature of the cold junction is identical. The invention is at precondition of confirmation of voltage, material, resistance and hot junction temperature, the cold junction temperature and refrigerating capacity of the array thermoelectric cooler unit can be controlled just by controlling the input current.

Description

technical field [0001] The invention relates to a cooling device for an extreme ultraviolet lithography mask table, in particular to a cooler for an electrostatic chuck of an extreme ultraviolet lithography mask table. Background technique [0002] Projection lithography technology is a cutting-edge technology in IC lithography processing. It uses the synchronous movement of the mask table and the workpiece table to project the graphics on the mask onto the resist-coated wafer through the miniature optical system, and then Finally, a pattern with reduced magnification is reproduced on the wafer through processes such as shaping and developing. Extreme ultraviolet lithography (EUVL) is the most promising next-generation lithography process. EUVL technology uses an extreme ultraviolet light source with a wavelength of 13.4nm, and through a reduced projection optical system composed of multilayer film mirrors, the mask pattern is copied to the silicon wafer in a vacuum environ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20F25B21/02H01L21/00
Inventor 尚永红李艳秋周鹏飞
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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