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Quantum dot light-emitting layer, quantum dot light-emitting device and preparation method

A quantum dot luminescence, quantum dot technology, applied in semiconductor/solid state device manufacturing, semiconductor device, electric solid device and other directions, can solve the problems of quantum dot quenching, quantum dot agglomeration, etc., to improve luminescence performance, improve color purity, The effect of increasing the width of the emission spectrum

Active Publication Date: 2021-03-02
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, during the preparation process, quantum dots are prone to agglomeration, which in turn causes quantum dots to self-quench

Method used

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  • Quantum dot light-emitting layer, quantum dot light-emitting device and preparation method
  • Quantum dot light-emitting layer, quantum dot light-emitting device and preparation method

Examples

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preparation example Construction

[0044] As an example, the preparation method of the quantum dot light-emitting layer includes: providing a metal-organic framework raw material solution, coating the metal-organic framework raw material solution on a substrate or a functional layer, and drying to form a metal-organic framework layer.

[0045] The quantum dot raw material solution is provided, the quantum dot raw material solution is coated on the metal organic framework layer, dried, and the quantum dots are embedded in the pores of the metal organic framework layer to obtain the quantum dot light-emitting layer.

[0046] According to the specific structure of the quantum dot light-emitting device to be prepared, the quantum dot light-emitting layer can be selectively formed on the substrate or the functional layer, wherein the functional layer can be a hole transport layer or an electron transport layer.

[0047] It can be understood that both the metal-organic framework raw material solution and the quantum dot...

example 3

[0058] As Example 3, the quantum dot light-emitting device includes: a transparent conductive electrode, a quantum dot light-emitting layer, and a metal electrode stacked sequentially from bottom to top. At this time, the quantum dot light-emitting device is an electroluminescent device without a transport layer structure, which is not shown in the figure.

[0059] Among them, for the hole transport layer and the electron transport layer mentioned in Example 1 and Example 2, the hole transport layer can be a separate hole transport layer, or it can be a stacked hole injection sublayer and a hole transport layer. layer. Likewise, the electron transport layer may be a single electron transport layer, or may be a laminated electron injection sublayer and electron transport sublayer.

[0060] The materials of the above functional layers are common in the art, and the following are examples respectively:

[0061] The electron injection sublayer can be LiF, NaF, LiQ, Li, and the t...

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Abstract

The invention discloses a quantum dot light-emitting layer, a quantum dot light-emitting device and a preparation method, and relates to the field of display technology. The quantum dot light-emitting layer includes: a metal organic framework layer, and quantum dots embedded in pores of the metal organic framework layer. The confinement and modification of quantum dots through the metal organic framework layer can not only avoid the self-quenching effect caused by the aggregation of quantum dots, but also help to improve their luminescent performance.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a quantum dot light-emitting layer, a quantum dot light-emitting device and a preparation method. Background technique [0002] Quantum dot light-emitting layers are widely used in quantum dot light-emitting devices based on their high color gamut, such as quantum dot light-emitting diodes. Therefore, it is very necessary to provide a quantum dot light-emitting layer. [0003] In related technologies, quantum dots coated with ligands on the surface are dissolved in a solvent to obtain a quantum dot solution, and the quantum dot solution is deposited on a substrate or a functional layer by a solution method to obtain a quantum dot light-emitting layer. [0004] However, during the preparation process, quantum dots are prone to agglomeration, which in turn causes quantum dots to self-quench. Contents of the invention [0005] In view of this, the present invention provides a qu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/60H10K50/115H10K71/00
Inventor 代青
Owner BOE TECH GRP CO LTD
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