69results about How to "Guaranteed optical properties" patented technology

This invention discloses a method for preparing water-soluble quantum dots in phase transfer condition. The water-soluble quantum dots are composed of oil-soluble quantum dots coated with amphiphilic surfactant to form a hydrophilic outer layer. The method comprises: utilizing quaternary ammonium salt amphiphilic surfactant as the phase-transfer agent, and transferring the quantum dots from oil phase to water phase. The water-soluble quantum dots have such advantages as high fluorescent intensity, narrow and symmetric fluorescent emission peak, high quantum yield, high stability, uniform dispersion and long storage life (2 months). The method has such advantages as simple process, good repeatability, and low cost. The water-soluble quantum dots can be used for biomedical analysis and detection such as fluorescent probe and cell imaging.

The invention is a backlight module, comprising an optical diaphragm group and a frame holding the optical diaphragm group, where the optical diaphragm group, where the optical diaphragm group is stacked of multiple optical diaphragm layers and the edge of the optical diaphragm group has an integrated salient formed by salient units on the edges of these diaphragms; and the frame has a groove to hold the salient.

The invention discloses a method for preparing a SiO2-coated Au@Ag core-shell nanorod. The method is characterized by firstly carrying out surface modification on an Au@Ag core-shell nanorod by adopting polyvinylpyrrolidone, then adding the Au@Ag core-shell nanorod modified with polyvinylpyrrolidone to isopropanol and using tetraethyl orthosilicate as a precursor and ammonia water as a catalyst to react at 35-50 DEG C for 2-4 hours, thus obtaining the Au@Ag@SiO2 core-shell nanorod. The preparation method has the effects of not only reducing the preparation time of the SiO2-coated Au@Ag core-shell nanorod but also solving the problem that the Au@Ag core-shell nanorod has poor dispersibility in organic phases and reducing the biotoxicity of the Au@Ag core-shell nanorod and provides a basis for application of the Au@Ag core-shell nanorod to the fields of biological detection, drug delivery, photothermal therapy, surface fluorescence enhancement, catalysis, and the like.

The back light module consists of one frame, one reflecting sheet, at least one lamp tube, one diffusion board, several optical diaphragms and at least one support member. The reflecting sheet is configured in the bottom of the frame, the lamp tube is configured inside the frame and over the reflecting sheet, the diffusion board is configured on the frame and located over the lamp tube, the optical diaphragms are configured on the diffusion board, and the support member on the reflecting sheet includes two support parts to support the diffusion board and the lamp tube separately.

The invention relates to an inverted LED epitaxial wafer of a GaAs-based armoring layer structure and a manufacturing method of the inverted LED epitaxial wafer. The inverted LED epitaxial wafer sequentially comprises a GaAs substrate, a GaAs buffer layer, a corrosion blocking layer, an ohmic contact layer, an N-Al<x>Ga<1-x>InP first armoring layer, an N-Al<x>Ga<1-x>InP second armoring layer, a lower limitation layer, a multi-quantum well luminous region, an upper limitation layer and a current extension layer from bottom to top. By arranging the second armoring layer, the inverted LED epitaxial wafer is matched with a conventional structure lattice, the high-quality armoring layer matched with the lattice can be enabled to grow in a matching way at a relatively high growth speed, the carbon-oxygen content can be prevented, the crystal growth quality is improved, the current extension and the optical characteristic are ensured, and the reliability and the stability of the device are improved; since the Al<x>Ga<1-x>As material can be grown at a high speed, the process time of an inverted LED is shortened by 20-35%, the product can be produced on a large scale, the external quantum efficiency can be greatly improved, so that the light efficiency of the product is greatly improved; and the brightness of the inverted LED can be improved by 60-80% compared with a traditional structure, and thus, the high-efficiency inverted LED can be produced on a large scale.

The invention provides a forming method for an optical fingerprint recognition device. The forming method comprises the steps that a silicon substrate is provided; a light transmitting substrate and an image sensor chip are provided and bonded, and a lens array is formed on the light transmitting substrate through a gradually-changing luminous flux photoetching method, wherein the lens array corresponds to a light sensing array of the image sensor chip; the silicon substrate and the light transmitting substrate are bonded, the silicon substrate is etched so that a through hole array corresponding to the lens array can be formed and the lens array can be exposed, and silicon light bars are formed between adjacent lenses. According to the forming method for the optical fingerprint recognition device, the lens array is formed through the gradually-changing luminous flux photoetching method, requirements for manufacturing of a more exquisite and complex lens can be met, optical characters needed by the optical fingerprint recognition device are accurately guaranteed, and the forming method is suitable for a portable electronic device and is compatible with an existing chip manufacturing and packaging technology so that cost can be reduced.

The invention provides a composite quantum dot. The composite quantum dot is a halide anion modified quantum dot, comprises quantum dot particles, and halide anions combined with the surfaces of the quantum dot particles. The composite quantum dot possesses electronegativity characteristic; the quantum dot solid state membrane can be prepared through electrodeposition. According to the composite quantum dot with the above characteristics, the optical characteristics of the quantum dot are not changed, quantum dot stability and charge conductive performance are improved, so that the quantum dotsolid state membrane can be prepared through electrodeposition.

The invention belongs to the technical field of electron beam lithography processing and particularly relates to a method for manufacturing an X-ray lens high in height-width ratio. The method comprises the steps that on a substrate or a membrane with a metal seed layer deposited, a design pattern of an X-ray convergent lens is prepared on photoresist through an electron beam lithography technology; then, a condenser structure high in height-width ratio is obtained through a nanometer electroplating technology; finally, the photoresist is dissolved through an organic solution such as acetone, and thus the condenser lens which is high in height-width ratio and is applied to the X-ray imaging field is obtained.

The embodiment of the invention relates to intelligent glasses for myopia. The intelligent glasses for myopia comprises a glasses frame, a ranging device which is arranged on the glasses frame, a leftvariable focal lens and a right variable focal lens, wherein each variable focal lens comprises a base sheet, a secondary sheet, transparent liquid, a pressure regulator and a chip; the chips are used for receiving current range data; when the current range data is less than a preset watching range threshold value, the current range data holding time is monitored; if the holding time is greater than the time threshold value, the chips are capable of generating a focal length adjusting instruction and sending to the pressure regulators; then pressure regulators are used for receiving the focallength adjusting instruction and changing the volume of the transparent liquid in an empty cavity based on the focal length adjusting instruction in order to adjust the pressure of the transparent liquid on the base sheets and the secondary sheets, so that the whole variable focal lens can be subjected to focal length change while the secondary sheets are deformed under the change of the pressurefrom the transparent liquid, and as a result, the focus variation is realized; after focus variation, eyes adjust to adapt to the varied focus, so that the focal length of the eyes are varied, and the tense eye adjusting muscle can be properly released, and the asthenopia is relieved.

The invention relates to a method for correcting deposition errors of broadband anti-reflection films prepared by a quartz monitoring method. The method comprises the following steps: 1) a monitoringthickness is designed; a four-layer film system is prepared; and the four-layer film system comprises two layers of films with two thicknesses and prepared by high-refractive-index materials, and twolayers of films with two thicknesses and prepared by low-refractive-index materials; 2) through reverse inversion and linear fit of the prepared four-layer film system, film thickness errors of the high-refractive-index materials and the low-refractive-index materials are obtained; and 3) film plating parameters of the broadband anti-reflection films to be prepared are corrected by the film thickness errors of the same materials. Compared with the prior art, the method can effectively correct the deposition errors and improve the spectral property, is simple in operation and high in generality, and achieves wide production of the broadband anti-reflection films in reality.

The invention provides an optical fingerprint recognition device and a forming method thereof. A lens array is formed through a gradually-changing luminous flux photoetching method so that requirements for manufacturing of a more exquisite and complex lens can be met, optical characters needed by the optical fingerprint recognition device are accurately guaranteed, and the optical fingerprint recognition device and the forming method thereof are suitable for a portable electronic device and are compatible with an existing chip manufacturing and packaging technology so that cost can be reduced.

The invention discloses an ion implantation method. In the method, high energy ion beams in ion beams which are emergent along a straight path are implanted in a workpiece at a preset incident angle, the workpiece is arranged at a preset station on the straight path, low energy ion beams in the ion beams are subjected to deflection at least once by electrical effect or magnetic effect, the position and/or the angle of the workpiece are/is adjusted relative to the preset station to enable the low energy ion beams to be implanted in the workpiece at a preset emergent angle, and the implantation positions of the low energy ion beams and the high energy ion beams on the workpiece are the same. The method does not regulate the beam path in front of a speedchange turning area, thus lowering the difficulty in beam adjustment, maintaining beam optical characteristics better, ensuring good stability of ion beams, facilitating beam control, shortening adjustment time consumed by beam path switch greatly and improving beam utilization ratio.

The object of the present invention is to provide a shipping tray for optical components, which prevents the tipping of the optical components during transportation and maintains the optimization of the optical properties of the optical components. In a shipping tray for optical components, a single edge of a plurality of optical components each having two main surfaces formed as horizontal flat surfaces, arranged vertically in sequence in the transverse and longitudinal directions on an adhesive tape positioned on the bottom surface of the main container ; A plurality of optical elements are covered by a cover, and a plurality of recesses are formed in the cover for respectively accommodating a plurality of optical elements. Each depression in the cover has a hole portion provided in its stepped portion, into which one of the optical elements is vertically inserted and from which the free edge side protrudes, and the shape of the hole portion is oval.

The invention relates to a GaAs base improved window layer structure green-yellow light LED and a manufacturing method thereof, and belongs to the photoelectron technical field; the structure comprises a GaAs substrate, a GaAs low temperature buffer layer, a Bragg reflector layer, an AlInP lower limit layer, a multi-quantum well luminescence area, an AlInP upper limit layer, a P type (Al<x>2Ga 1-<x>2)<y> 2In1-<y>2P first window layer and a P type GaP second window layer. A MOCVD device is employed to increase a high quality window layer matching with crystal lattices in a normal green-yellow light LED structure, thus forming an improved dual-layer window layer, thus preventing the oxidation of the first window layer, improving the quality of an original result first layer window layer, increasing the current expansion yield rate and optics window layer effect, and improving the device reliability and stability.

The invention belongs to the field of solar energy technology, and discloses a low-emissivity coated glass, and a preparation method thereof. The low-emissivity coated glass comprises a glass substrate and a film stack arranged on at least one surface of the glass substrate; the film stack comprises n groups of laminated film layers, and a Si3N4 film on the outermost film layer of the n groups oflaminated film layers; each group of the laminated film layers comprises a SiO2 layer, a SiONx layer, a Si3N4 layer, a SiONx layer, a SiO2 layer, and a SiONx layer successively from the side close tothe glass substrate and the side far away from the glass substrate. The low-emissivity coated glass possesses low emissivity on certain light wave bands, relatively high visible light transmissivity,and relatively excellent film layer stability, and is suitable to be used in building doors and windows, curtain walls, and photovoltaic assemblies.

The invention provides a laser scanning unit and a laser printer. The laser scanning unit comprises a laser diode, a collimating lens group, a polygonal mirror motor and an organic photo conductor which are set along a light path. The collimating lens group comprises shaping lenses which enable divergence angles of laser beams emitted by the laser diode to be equal in a vertical direction and a parallel direction. According to the design, only single-time optical shaping and focusing are required and the focusing does not need to be carried out for the beam rotationally reflected by the polygonal mirror motor, at each angle, so a design verification period for optical development is greatly reduced. Compared with the prior art, the laser scanning unit and the laser printer have the advantages that an FTL lens is avoided, so development cost is reduced and production cost is greatly reduced. Control over accumulated tolerance is facilitated through reduction of optical elements, and optical performance is relatively stable.

The present invention provides a laser scanning unit and a laser printer. The laser scanning unit comprises a laser generator disposed along an optical path, a lens group, a polygon motor, and a lightreceiving surface; and at least one reflecting mirror for folding laser beams is disposed between the lens group and the polygon motor. The unit folds the laser beams by adding one or more reflectingmirrors, ensures optical characteristics while optimizing component layout design, can greatly reduce overall size, and can reduce structure materials and save costs. The overall size is reduced, which is more conducive to the miniaturization and lightweight design of the whole machine. The unit makes overall size smaller, and is more advantageous for miniaturization and lightweight design of thewhole machine.

The invention relates to an oxide sintering body, an oxide sputtering target, a conductive oxide thin film and a method for manufacturing the oxide sintering body. The oxide sintering body is characterized in that the oxide sintering body contains In, Ti, Zn, Sn and O, the content of In relative to that of Ti satisfies a relational expression 3.0<=In/Ti<=5.0 when represented by an atomic number ratio, the content of Zn and Sn relative to that of In and Ti satisfies a relational expression 0.2<=(Zn+Sn)/(In+Ti)<=1.5 when represented by an atomic number ratio, and the content of Zn relative to that of Sn satisfies a relational expression 0.5<=Zn/Sn<=7.0 when represented by an atomic number ratio. The volume resistivity of the oxide sintering body is low, DC sputtering can be performed, and a transparent conducting film with a high index of refraction can be formed.

The invention relates to a GaAs-based multi-junction yellow-green light LED and a preparation method thereof, and belongs to the field of photoelectrons. The LED comprises a GaAs substrate, a GaAs low-temperature buffer layer, a Blagg reflector layer, an AlInP lower limiting layer, a multi-quantum well light-emitting region, an AlInP upper limiting layer, an AlxGa1-xInP lattice transition layer, atunnel junction of a GaAs material and a GaP window layer from bottom to top, wherein the tunnel junction of the GaAs material is formed by a GaAs doped P-type layer, a GaAs intrinsic layer and a GaAs doped N-type layer. According to the invention, after the AlInP upper limiting layer is grown, the tunnel junction of the GaAs material with high conductivity and lattice matching grows, and then the LED material with a conventional structure grows, so that the effect of luminous efficiency superposition is achieved on the premise of not increasing voltage, the cost of the device can be reduced,and the quantum efficiency can be greatly improved.