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Oxide sintering body, oxide sputtering target, conductive oxide thin film and method for manufacturing oxide sintering body

A manufacturing method and technology of sintered body, applied in the directions of sputtering plating, ion implantation plating, coating, etc., can solve the problem of difficult to use plastic substrates, organic EL devices, not particularly aware of film crystallinity, and inability to have high refractive index Material usage and other issues to achieve the effect of improving productivity, improving characteristics, and reducing equipment costs

Inactive Publication Date: 2016-04-13
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials have a refractive index in the range of about 1.95 to about 2.05 at a wavelength of 550 nm, and cannot be used as high refractive index materials (n > 2.05) for optical adjustment
In addition, ITO has the following problems: in order to improve the transmittance, the substrate is heated during film formation or annealing is required after film formation, and it is difficult to use it for plastic substrates that cannot be heated, organic EL devices, etc.
In addition, IZO has the following problem: it has absorption on the short wavelength side, so it becomes a yellowish film
However, as a result of continuing research, the composition range includes the composition range in which the obtained thin film becomes a crystalline film, and such a crystalline film is not suitable for use as a flexible device or when moisture protection is required.
It should be noted that, depending on the application of the thin film, a crystalline film may be preferable. In Patent Document 2, in the case of a thin film transistor, a stable film cannot be obtained if it is an amorphous film.
In addition, although a wide composition range of a transparent conductive film has been known (for example, Patent Document 3), the crystallinity of the film has not been particularly recognized.

Method used

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  • Oxide sintering body, oxide sputtering target, conductive oxide thin film and method for manufacturing oxide sintering body
  • Oxide sintering body, oxide sputtering target, conductive oxide thin film and method for manufacturing oxide sintering body

Examples

Experimental program
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Effect test

Embodiment 1

[0078] Ready In 2 o 3 Powder, TiO 2 powder, ZnO powder, SnO 2 powder, these powders were prepared in the compounding ratios listed in Table 1, and mixed. Next, the mixed powder was calcined in the atmosphere at a temperature of 1050° C., and then wet pulverized (using ZrO 2 Microbeads) were crushed to an average particle size of 2 μm or less, dried and sieved with a sieve with a pore size of 150 μm. Then, the finely pulverized powder was heated under an argon atmosphere at a temperature of 1100°C and a pressure of 250kgf / cm 2 hot-pressed sintering conditions. Then, the sintered body is machined and finished into a target shape. In addition, as a result of analyzing the component composition of a sputtering target, it confirmed that it was the same as the compounding ratio of a raw material powder.

[0079] Next, sputtering was performed using the 6-inch-diameter target obtained by the above finishing process. The sputtering conditions were set as: DC sputtering, sputteri...

Embodiment 2

[0083] Ready In 2 o 3 Powder, TiO 2 powder, ZnO powder, SnO 2 powder, these powders were prepared in the compounding ratios listed in Table 1, and mixed. Next, the mixed powder was calcined in the atmosphere at a temperature of 1050° C., and then wet pulverized (using ZrO 2 Microbeads) were crushed to an average particle size of 2 μm or less, dried and sieved with a sieve with a pore size of 150 μm. Then, the finely pulverized powder was heated under an argon atmosphere at a temperature of 1150°C and a pressure of 250kgf / cm 2 hot-pressed sintering conditions. Then, the sintered body is machined and finished into a target shape. Next, sputtering was performed under the same conditions as in Example 1 using the 6-inch-diameter target obtained by the above finishing process.

[0084] Table 1 shows the above results. As shown in Table 1, the relative density of the sputtering target reached 97.7%, and the volume resistivity was 4.4 mΩcm, enabling stable DC sputtering. Fur...

Embodiment 3

[0086] Ready In 2 o 3 Powder, TiO 2 powder, ZnO powder, SnO 2 powder, these powders were prepared in the compounding ratios listed in Table 1, and mixed. Next, the mixed powder was calcined in the atmosphere at a temperature of 1050° C., and then wet pulverized (using ZrO 2 Microbeads) were crushed to an average particle size of 2 μm or less, dried and sieved with a sieve with a pore size of 150 μm. Then, the finely pulverized powder was heated under an argon atmosphere at a temperature of 1150°C and a pressure of 250kgf / cm 2 hot-pressed sintering conditions. Then, the sintered body is machined and finished into a target shape. Next, sputtering was performed under the same conditions as in Example 1 using the 6-inch-diameter target obtained by the above finishing process.

[0087] Table 1 shows the above results. As shown in Table 1, the relative density of the sputtering target reaches 99.5%, the volume resistivity is 3.7 mΩcm, and stable DC sputtering can be performe...

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Abstract

The invention relates to an oxide sintering body, an oxide sputtering target, a conductive oxide thin film and a method for manufacturing the oxide sintering body. The oxide sintering body is characterized in that the oxide sintering body contains In, Ti, Zn, Sn and O, the content of In relative to that of Ti satisfies a relational expression 3.0<=In / Ti<=5.0 when represented by an atomic number ratio, the content of Zn and Sn relative to that of In and Ti satisfies a relational expression 0.2<=(Zn+Sn) / (In+Ti)<=1.5 when represented by an atomic number ratio, and the content of Zn relative to that of Sn satisfies a relational expression 0.5<=Zn / Sn<=7.0 when represented by an atomic number ratio. The volume resistivity of the oxide sintering body is low, DC sputtering can be performed, and a transparent conducting film with a high index of refraction can be formed.

Description

technical field [0001] The present invention relates to an oxide sintered body, an oxide sputtering target, a conductive oxide thin film, and a method for producing an oxide sintered body, and in particular to a conductive oxide suitable for forming high transmittance, high refractive index, and amorphous Thin-film oxide sintered sputtering target. Background technique [0002] When using visible light in various optical devices such as displays and touch panels, the materials used need to be transparent, and in particular, high transmittance is desired over the entire visible light region. In addition, in various optical devices, light loss sometimes occurs due to the difference in refractive index at the interface with the constituent film material or substrate; Method for thick optically modulating films. The refractive index required for the optical adjustment film differs depending on the structure of various devices, and thus a wide range of refractive indices is req...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C23C14/08C23C14/34C04B35/622C04B35/64C04B35/645
CPCC04B35/01C04B35/62218C04B35/64C04B35/645C04B2235/9653C23C14/08C23C14/3407C23C14/3414
Inventor 奈良淳史
Owner JX NIPPON MINING & METALS CO LTD
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