Method for regulating and controlling ion beam sputtered silicon dioxide optical membrane stress
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- THE 3RD ACAD 8358TH RES INST OF CASC
- Publication Date
- 2015-04-01
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of adjusting the stress of silicon dioxide optical thin films, and in particular relates to a method for regulating and controlling the stress of silicon dioxide optical thin films by ion beam sputtering applied in low-loss and anti-laser damage threshold thin film technology. Background technique
[0002] SiO 2 Thin film is an important nano-film material, which has the advantages of wide transparent area (0.15 μm ~ 8 μm), low refractive index, high hardness, low thermal expansion coefficient, electrical insulation, friction resistance, acid and alkali resistance, and corrosion resistance. It is used in the fields of optical thin film components, semiconductor integrated circuits, electronic devices, sensors, laser devices, chemical catalysis, biomedicine, surface modification and pharmaceutical packaging. In the field of optical thin films, SiO 2 Thin film is one of the essential low refractive index mate...