Method for regulating and controlling ion beam sputtered silicon dioxide optical membrane stress

A technology of ion beam sputtering and silicon dioxide, applied in sputtering plating, ion implantation plating, coating, etc., can solve problems such as low stress characteristics

Inactive Publication Date: 2015-04-01
THE 3RD ACAD 8358TH RES INST OF CASC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In SiO 2 In thin film applications, low stress characteristics are still one of the important issues in the application of optical thin films. At present, SiO 2 There are few reports on process parameter adjustment methods for thin film stress regulation

Method used

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  • Method for regulating and controlling ion beam sputtered silicon dioxide optical membrane stress
  • Method for regulating and controlling ion beam sputtered silicon dioxide optical membrane stress
  • Method for regulating and controlling ion beam sputtered silicon dioxide optical membrane stress

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1) Single-sided polished fused silica substrate (Φ25×1mm) is used for thin film stress test. Before coating, use the American ZYGO laser profiler to measure the surface shape of the substrate. The sample with the local error of surface shape ΔN2 For thin film deposition experiments, see image 3 ;

[0047] 2) Before coating, the substrate is chemically treated (chemical reagents include hydrochloric acid, ammonia water, hydrogen peroxide and deionized water), and then cleaned by ultrasonic waves. After the treatment is completed, dry it with a centrifugal dryer (ultrasonic frequency 3000kHz, ultrasonic time 15min ), after the treatment is completed, dry (6000r / min) with a centrifugal dryer;

[0048] 3) The 16cm ion source is used as the sputtering ion source, the radio frequency frequency of the ion source is 13.56MHz, the ion beam voltage of the 16cm ion source is selected as 1250V, and the ion beam current is selected as 650mA;

[0049] 4) The target material is a hi...

Embodiment 2

[0053] 1) Single-sided polished fused silica substrate (Φ25×1mm) is used for thin film stress test. Before coating, use the American ZYGO laser profiler to measure the surface shape of the substrate. The sample with the local error of surface shape ΔN2 For thin film deposition experiments, see Figure 5 ;

[0054] 2) Before coating, the substrate is chemically treated (chemical reagents include hydrochloric acid, ammonia water, hydrogen peroxide and deionized water), and then cleaned by ultrasonic waves. After the treatment is completed, dry it with a centrifugal dryer (ultrasonic frequency 3000kHz, ultrasonic time 15min ), after the treatment is completed, dry (6000r / min) with a centrifugal dryer;

[0055] 3) The 16cm ion source is used as the sputtering ion source, the radio frequency frequency of the ion source is 13.56MHz, the ion beam voltage of the 16cm ion source is selected as 1250V, and the ion beam current is selected as 650mA;

[0056] 4) The target material is a h...

Embodiment 3

[0060] 1) Single-sided polished fused silica substrate (Φ25×1mm) is used for thin film stress test. Before coating, use the American ZYGO laser profiler to measure the surface shape of the substrate. The sample with the local error of surface shape ΔN2 For thin film deposition experiments, see Figure 7 ;

[0061] 2) Before coating, the substrate is chemically treated (chemical reagents include hydrochloric acid, ammonia water, hydrogen peroxide and deionized water), and then cleaned by ultrasonic waves. After the treatment is completed, dry it with a centrifugal dryer (ultrasonic frequency 3000kHz, ultrasonic time 15min ), after the treatment is completed, dry (6000r / min) with a centrifugal dryer;

[0062] 3) The 16cm ion source is used as the sputtering ion source, the radio frequency frequency of the ion source is 13.56MHz, the ion beam voltage of the 16cm ion source is selected as 1250V, and the ion beam current is selected as 650mA;

[0063] 4) The target material is a h...

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Abstract

The invention belongs to the technical field of silicon dioxide optical membrane stress regulation, and in particular relates to a method for regulating and controlling ion beam sputtered silicon dioxide optical membrane stress. According to the method, the size of oxygen flow in the ion beam sputtering process is adjusted so as to control the stress of an SiO2 membrane on the premise that the on-crystal micro structure and the optical property of the membrane are ensured, and thus the method is applied to the fields of super-low consumption laser membranes and high-damage threshold laser membranes. According to the scheme, after a substrate is subjected to chemical washing, ultrasonic wave washing and ion beam bombardment washing in sequence, the size of the oxygen flow is adjusted under the condition that other parameters are not changed in the preparation process, so that the stress of a prepared silicon dioxide membrane is effectively controlled, and the silicon dioxide membrane can meet the application in the fields such as super-low consumption laser membranes and high-damage threshold laser membranes.

Description

technical field [0001] The invention belongs to the technical field of adjusting the stress of silicon dioxide optical thin films, and in particular relates to a method for regulating and controlling the stress of silicon dioxide optical thin films by ion beam sputtering applied in low-loss and anti-laser damage threshold thin film technology. Background technique [0002] SiO 2 Thin film is an important nano-film material, which has the advantages of wide transparent area (0.15 μm ~ 8 μm), low refractive index, high hardness, low thermal expansion coefficient, electrical insulation, friction resistance, acid and alkali resistance, and corrosion resistance. It is used in the fields of optical thin film components, semiconductor integrated circuits, electronic devices, sensors, laser devices, chemical catalysis, biomedicine, surface modification and pharmaceutical packaging. In the field of optical thin films, SiO 2 Thin film is one of the essential low refractive index mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/10C23C14/54C23C14/46C23C14/02
CPCC23C14/10C23C14/021C23C14/46C23C14/54
Inventor 刘华松王利栓季一勤姜承慧刘丹丹姜玉刚
Owner THE 3RD ACAD 8358TH RES INST OF CASC
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