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GaAs base improved window layer structure green-yellow light LED and manufacturing method thereof

A manufacturing method and a technology for a window layer, which are applied in the field of optoelectronics, can solve the problems of no window layer improvement scheme, poor epitaxial deposition efficiency at the edge of the carrier disc, and low light efficiency, so as to ensure current expansion and optical properties, and improve external quantum Efficiency, improve the effect of product light efficiency

Pending Publication Date: 2018-05-29
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the wavelength of quaternary AlGaInP materials shortens, the Al composition of the active layer increases continuously, and the combination of Al atoms with oxygen or carbon atoms leads to serious lattice defects in the material, and the luminous efficiency decreases; on the other hand, the energy band of yellow-green light Due to the increase in the proportion of Al components, the energy gap gradually changes from direct energy gap to indirect energy gap, and the internal quantum efficiency further drops significantly, resulting in low luminous efficiency of LED products in the yellow-green light band; at the same time, the production of At the same time, due to the poor epitaxial deposition efficiency at the edge of the carrier disk, the edge performance of the epitaxial wafer is poor after growth, and the production yield is low. Such problems are more obvious in the yellow-green light band with the more extreme process window.
At present, there is no improvement scheme for the window layer in the prior art

Method used

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  • GaAs base improved window layer structure green-yellow light LED and manufacturing method thereof

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Embodiment 1

[0042] A GaAs-based yellow-green LED with an improved window layer structure, comprising a GaAs substrate, a GaAs low-temperature buffer layer, a Bragg mirror layer, an AlInP lower confinement layer, a multi-quantum well light-emitting region, an AlInP upper confinement layer, (Al x2 Ga 1-x2 ) y2 In 1-y2 a P first window layer and a P-type GaP second window layer.

Embodiment 2

[0044] A method for manufacturing a GaAs-based yellow-green LED with an improved window layer structure, comprising the following steps:

[0045] (1) Put the GaAs substrate in the growth chamber of the MOCVD equipment, H 2 The environment is heated to 800±20°C and baked for 30 minutes, and AsH is introduced 3 , removing water and oxygen on the surface of the substrate to complete the surface heat treatment to prepare for step (2);

[0046] (2) Slowly lower the temperature to 750±20°C, and continue to feed TMGa and AsH 3 , grow a GaAs low-temperature buffer layer with a thickness of 0.5um on the GaAs substrate; the cooling time is 120s;

[0047] (3) Keep the temperature at 750±20°C, and continue to feed TMGa, TMAl, and AsH 3 , growing a Bragg reflector layer on the GaAs low-temperature buffer layer in step (2), the Bragg reflector layer being AlGaAs;

[0048] (4) The temperature drops to 700±20°C, and TMIn, TMAl, and PH are introduced 3 , growing an n-type AlInP lower conf...

Embodiment 3

[0055] A method for manufacturing a GaAs-based yellow-green LED with an improved window layer structure, the steps of which are as described in Example 2, except that in step (2), the cooling time is 150s.

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Abstract

The invention relates to a GaAs base improved window layer structure green-yellow light LED and a manufacturing method thereof, and belongs to the photoelectron technical field; the structure comprises a GaAs substrate, a GaAs low temperature buffer layer, a Bragg reflector layer, an AlInP lower limit layer, a multi-quantum well luminescence area, an AlInP upper limit layer, a P type (Al<x>2Ga 1-<x>2)<y> 2In1-<y>2P first window layer and a P type GaP second window layer. A MOCVD device is employed to increase a high quality window layer matching with crystal lattices in a normal green-yellow light LED structure, thus forming an improved dual-layer window layer, thus preventing the oxidation of the first window layer, improving the quality of an original result first layer window layer, increasing the current expansion yield rate and optics window layer effect, and improving the device reliability and stability.

Description

technical field [0001] The invention relates to a GaAs-based yellow-green LED with an improved window layer structure and a manufacturing method thereof, belonging to the field of optoelectronic technology. Background technique [0002] LED itself has the advantages of small size, light weight, low heat generation, low power consumption, long life, good monochromaticity, fast response, environmental protection, and good shock resistance, so it is widely used in various fields. With the continuous advancement of technology and the change of people's life philosophy, quaternary AlGaInP yellow-green light-emitting diodes are widely used in various fields such as signal indication, traffic indication, automotive lighting, and special lighting. As the wavelength of quaternary AlGaInP materials shortens, the Al composition of the active layer increases continuously, and the combination of Al atoms with oxygen or carbon atoms leads to serious lattice defects in the material, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30H01L33/12H01L33/10H01L33/06H01L33/02H01L33/00
CPCH01L33/0062H01L33/02H01L33/06H01L33/10H01L33/12H01L33/30
Inventor 李志虎张新于军王成新徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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