Comprehensive Utilization Method of Silicon Carbide Crystal Growth Leftovers

Abstract

The invention discloses a comprehensive utilization method of silicon carbide nucleation residue. The comprehensive utilization method comprises the following steps: S1, removing silicon carbide in the silicon carbide nucleation residue to obtain high-purity carbon material; S2, using the high-purity carbon material to make a filler of the thermal insulation structure; S3, arranging that heat preservation structure outside a silicon carbide nucleation crucible for heat preservation; S4, when the filler in the thermal insulation structure is eroded and cannot be used for thermal insulation, repeating the methods of steps S1-S4 on the eroded filler. The method of the invention realizes the secondary utilization of the nucleation residue, realizes the recycling use of the thermal insulation material on the premise of ensuring the consistency of the thermal insulation performance of the thermal insulation material, and saves the cost.

Description

technical field [0001] The invention relates to the technical field of silicon carbide crystal growth, in particular to a comprehensive utilization method of silicon carbide crystal growth leftovers. Background technique [0002] Silicon carbide single crystal is one of the most important third-generation semiconductor materials. It is widely used in power electronics, radio frequency Devices, optoelectronic devices and other fields. [0003] At present, the preparation technology of high-quality SiC single crystal is becoming more and more mature, but its high cost still restricts the wide application of SiC crystal. Components such as graphite crucibles are coated with protective films to reduce the cost of SiC crystals. However, high-purity insulation materials are also very expensive in the growth of silicon carbide crystals. The growth process of silicon carbide single crystals needs to be carried out at a temperature of about 2000 ° C. The insulation materials used f...

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Problems solved by technology

[0003] At present, the preparation technology of high-quality SiC single crystal is becoming more and more mature, but its high cost still restricts the wide application of SiC crystal. Components such as graphite crucibles are coated with protective films to reduce the cost of SiC crystals

However, high-purity insulation materials are also very expensive in the growth of silicon carbide crystals. The growth process of silicon carbide single crystals needs to be carried out at a temperature of about 2000 ° C. The insulation materials used for crystal growth are usually high temperature resistant materials such as graphite stick and graphite paper. In the preparation of carbon materials, silicon atmosphere will diffuse to the vicinity of the insulation material during the crystal growth process, and react with the insulation material to cause erosion of the insulation material and accelerate the loss of the insulation material

When the insulation material is eroded, the performance of the insulation material will be affected, which will cause fluctuations and unevenness of the temperature field during the crystal growth process, induce a series of problems such as inclusions, micropipes, and stress, and affect the quality and quality of the crystal. Yield

[0004] Among the silicon carbide crystal growth leftovers, the leftovers after the growth of silicon carbide crystals are mainly silicon carbide polycrystalline and carbon particles, which cannot be reused for silicon carbide crystal growth, and there is currently no effective way to recycle them

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