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Auxiliary heating method and device and single crystal furnace for growing single crystals with induction heating czochralski method

A technology of auxiliary heating and induction heating, applied in the auxiliary heating of induction heating Czochralski method to grow single crystal, single crystal furnace field, can solve the problem of insufficient growth power and other problems

Inactive Publication Date: 2019-02-15
BEIFANG UNIV OF NATITIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the crystal growth process, the liquid level of the melt gradually decreases, more and more exposed crucible side walls, more and more heat is radiated to the melt, and the longitudinal temperature gradient of the melt gradually decreases. Insufficient to provide sufficient growth momentum, crystal growth will stop

Method used

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  • Auxiliary heating method and device and single crystal furnace for growing single crystals with induction heating czochralski method
  • Auxiliary heating method and device and single crystal furnace for growing single crystals with induction heating czochralski method

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Embodiment 1

[0038] Example 1: growing lithium tantalate (LT) crystals, an iridium gold crucible 15 with a diameter of 160mm and a height of 100mm, charged with 14Kg, and growing 4-inch crystals. The auxiliary heating wire 16 is platinum, the cross-sectional thickness of the auxiliary heating wire 16 is 0.5 mm, and the cross-sectional height of the auxiliary heating wire 16 is 2 mm. Straight, the growth interface is slightly convex, and the reference rate of crystal growth raw materials is 63%.

Embodiment 2

[0039] Example 2: growing lithium tantalate (LT) crystals, an iridium gold crucible 15 with a diameter of 160 mm and a height of 100 mm was charged with 14Kg, and a 4-inch crystal was grown. The auxiliary heating wire 16 is a nickel strip, the cross-sectional thickness of the auxiliary heating wire 16 is 1.0 mm, and the cross-sectional height of the auxiliary heating wire 16 is 2 mm. The position of the auxiliary heating wire 16 is at two-thirds of the height from the crucible 15 top. Straight, the growth interface is slightly convex, and the utilization rate of crystal growth materials is 64%.

[0040] The steps in the methods of the embodiments of the present invention can be adjusted, combined and deleted according to actual needs.

[0041] The modules or units in the device of the embodiment of the present invention can be combined, divided and deleted according to actual needs.

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Abstract

The invention discloses an auxiliary heating method for growing single crystals with an induction heating czochralski method. At a crystal growth stage, an auxiliary temperature field is arranged on the outer side of a crucible, the crucible can emit heat, the auxiliary temperature field is placed on the outer side of the crucible side wall extending in the radial direction, melt in the crucible is heated by the auxiliary temperature field, and the longitudinal temperature gradient of the melt in the crucible is improved. In the technical scheme, the auxiliary temperature field is added to theouter side of the crucible to heat the melt in the crucible, so that heat produced by the crucible side wall exposed above the liquid level of the melt on the melt can be offset, and the required temperature gradient for crystal growth is guaranteed. The invention also provides an auxiliary heating device and a single crystal furnace for growing single crystals with the induction heating czochralski method.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal equipment, in particular to an auxiliary heating method and device for growing single crystal by induction heating Czochralski method and a single crystal furnace. Background technique [0002] The Czochralski method for growing single crystals is one of the most mature and commonly used crystal growth methods for growing single crystals by the melt method. The primary requirement for growing single crystals by the melt Czochralski method is a suitable temperature field, that is, the distribution of temperature in space . The description of the temperature field is generally described by radial and axial temperature gradients. For single crystal growth by Czochralski method, suitable temperature gradient is the first condition for growing single crystal. Induction heating is the most commonly used heating method for Czochralski growth of single crystals. The high-frequency cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/10C30B15/14
CPCC30B15/10C30B15/14
Inventor 肖学峰张学锋韦海成张欢
Owner BEIFANG UNIV OF NATITIES
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