A sapphire single crystal furnace insulation structure

A sapphire single crystal furnace and brick structure technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of volatilization of molybdenum heat shield structure, low heat energy utilization rate, short service life, etc., and achieve excellent insulation Thermal insulation properties, less heat loss, and the effect of reducing power consumption

Active Publication Date: 2016-03-16
HARBIN AURORA OPTOELECTRONICS TECH
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method that can effectively utilize heat energy, reduce heat loss, enhance the heat preservation effect, establish a reasonable temperature gradient, make the temperature field easier to adjust, and solve the problem of low heat energy utilization rate in the traditional Kyropoulos single crystal furnace and the use of molybdenum The heat shield structure volatilizes and deforms in high temperature environment, and the sapphire single crystal furnace heat preservation structure has the problem of short service life

Method used

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  • A sapphire single crystal furnace insulation structure
  • A sapphire single crystal furnace insulation structure
  • A sapphire single crystal furnace insulation structure

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Embodiment Construction

[0022] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] combine Figure 1-3 In this embodiment, there is a small furnace cover 1 and a large furnace cover 2 on the single crystal furnace. The thermal insulation structure of the sapphire single crystal furnace consists of a zirconia fiber brick thermal insulation structure 3 under the furnace cover, a zirconia fiber brick structure 4 on the upper heat shield, and a side The heat shield zirconia fiber brick structure 5 and the lower heat shield zirconia fiber brick structure 6 are composed. The thermal insulation structure 3 of zirconia fiber bricks under the furnace cover is a circular thermal insulation layer of zirconia fiber bricks composed of 2 zirconia fiber bricks. The outer diameter is smaller than the large furnace cover, and the inner diameter is 10mm larger than the inner wall of the small furnace cover. It is fixed with 4 sets of screws. Below the big st...

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Abstract

The invention provides a heat insulation structure of a sapphire single crystal furnace. The heat insulation structure comprises a furnace cover lower zirconium oxide fiber brick heat insulation structure, an upper heat shield zirconium oxide fiber brick structure, a side heat shield zirconium oxide fiber brick structure and a lower heat shield zirconium oxide fiber brick structure. According to the heat insulation structure of the sapphire single crystal furnace, which is disclosed by the invention, the heat can be effectively utilized, the heat loss is reduced, the heat insulation effect is enforced, and the reasonable temperature gradient is established so that a temperature field is easier to be regulated, and the problems that the heat utilization rate is low, a utilized molybdenum heat shield structure is evaporated and deformed and is short in service life under the high temperature environment and the like in the traditional kyropoulos method single crystal furnace are solved.

Description

(1) Technical field [0001] The invention relates to a heat field structure in a crystal growth furnace, in particular to a thermal insulation structure in a single crystal furnace for growing sapphire by a cold-heart shoulder micro-pulling method. (2) Background technology [0002] Sapphire single crystal has excellent optical, mechanical, chemical and electrical properties, and has high optical transmittance from 0.190 to 5.5 μm, and can work under harsh conditions close to 2000 ° C. Window materials for components, infrared military devices, space vehicles, and high-intensity lasers. Especially because of its excellent comprehensive performance, it has become the material of choice for semiconductor substrates for LEDs. [0003] Sapphire has the characteristics of stable performance, large market demand, comprehensive utilization rate and high product added value, and has become a hot spot in research and development and industrialization at home and abroad in recent year...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/20
Inventor 左洪波杨鑫宏张学军丁广博
Owner HARBIN AURORA OPTOELECTRONICS TECH
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