The invention discloses a
crystal pulling growth
furnace temperature field structure and a pulling growth technology thereof. The temperature field structure comprises an aluminum
oxide heat preservation cylinder (1), a
zirconium oxide brick heat preservation cylinder (2), an
iridium crucible (3), a
zirconium oxide crucible holder (4), an aluminum oxide bottom holder (5), a first
zirconium oxide cover plate (6), a second
zirconium oxide cover plate (13), an aluminum oxide positioning ring (7), an aluminum oxide upper heat preservation inner cylinder (8) and an
zirconium oxide upper heat preservation outer cylinder (8). The technology comprises: preparation before charging,
iridium crucible treatment, charging, feeding, first material melting,
seed crystal preparation and adjustment, second material melting, air inflation,
seed crystal preheating,
crystal growth, and ending. According to the invention, the reasonable temperature field structure and the pulling growth technology thereof are designed, and the
energy consumption is reduced on the premise of ensuring high temperature and
temperature gradient required by growth.
Necking is performed before shouldering, that is, the temperature is slightly high when pulling is started, so as to enable the
diameter of a
seed crystal to be reduced by about 1mm; then the temperature is reduced for shouldering, so as to prevent a seed
crystal defect from extending into the crystal as far as possible.