Crystal pulling growth furnace temperature field structure and pulling growth technology thereof

Abstract

The invention discloses a crystal pulling growth furnace temperature field structure and a pulling growth technology thereof. The temperature field structure comprises an aluminum oxide heat preservation cylinder (1), a zirconium oxide brick heat preservation cylinder (2), an iridium crucible (3), a zirconium oxide crucible holder (4), an aluminum oxide bottom holder (5), a first zirconium oxide cover plate (6), a second zirconium oxide cover plate (13), an aluminum oxide positioning ring (7), an aluminum oxide upper heat preservation inner cylinder (8) and an zirconium oxide upper heat preservation outer cylinder (8). The technology comprises: preparation before charging, iridium crucible treatment, charging, feeding, first material melting, seed crystal preparation and adjustment, second material melting, air inflation, seed crystal preheating, crystal growth, and ending. According to the invention, the reasonable temperature field structure and the pulling growth technology thereof are designed, and the energy consumption is reduced on the premise of ensuring high temperature and temperature gradient required by growth. Necking is performed before shouldering, that is, the temperature is slightly high when pulling is started, so as to enable the diameter of a seed crystal to be reduced by about 1mm; then the temperature is reduced for shouldering, so as to prevent a seed crystal defect from extending into the crystal as far as possible.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a temperature field structure of a crystal pulling growth furnace and a pulling growth process thereof. Background technique [0002] The pulling method, also known as the Czochralski method, is a method for growing high-quality single crystals from a melt invented by J. Czochralski in 1917. This method enables the growth of important gemstone crystals such as colorless sapphire, ruby, yttrium aluminum garnet, gadolinium garnet, alexandrite and spinel. [0003] The basic principle of the pulling method: the pulling method is to heat and melt the raw materials constituting the crystal in a crucible, connect the seed crystal on the surface of the melt to pull the melt, and under controlled conditions, make the seed crystal and the melt at the interface The rearrangement of atoms or molecules is continuously carried out on the surface, and a single crystal is grown by gradually solidi...

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Problems solved by technology

[0004] The growth of laser crystal is mainly a crystallization process under the condition of high temperature melting. Since the growth requires relatively high temperature, and the method of obtaining high temperature is medium frequency induction heating, the consumption of electric energy is relatively high.

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