Crystal pulling growth furnace temperature field structure and pulling growth technology thereof

A growth furnace and crystal technology are applied in the field of crystal pulling growth furnace temperature field structure and its pulling growth process, and can solve the problem of high power consumption

Inactive Publication Date: 2016-11-09
成都晶九科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The growth of laser crystal is mainly a crystallization process under the condition of high temperature melting. Since the growth requires relatively

Method used

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  • Crystal pulling growth furnace temperature field structure and pulling growth technology thereof
  • Crystal pulling growth furnace temperature field structure and pulling growth technology thereof

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Embodiment Construction

[0085] The technical solution of the present invention will be further described in detail below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited to the following description.

[0086] Such as figure 1 As shown, the temperature field structure of the crystal pulling growth furnace includes an alumina insulation cylinder 1, a zirconia brick insulation cylinder 2, an iridium crucible 3, a zirconia crucible support 4, an alumina bottom support 5, a first zirconia cover plate 6, Alumina positioning ring 7, alumina upper insulation cylinder 8 and zirconia upper insulation cylinder 9; the peripheral wall of iridium crucible 3 is covered by zirconia brick insulation cylinder 2 and alumina insulation cylinder 1 successively from inside to outside; iridium crucible 3 The bottom of the crucible is set on the zirconia crucible support 4, the zirconia crucible support 4, the zirconia brick insulation cylinder 2 and the alumina...

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Abstract

The invention discloses a crystal pulling growth furnace temperature field structure and a pulling growth technology thereof. The temperature field structure comprises an aluminum oxide heat preservation cylinder (1), a zirconium oxide brick heat preservation cylinder (2), an iridium crucible (3), a zirconium oxide crucible holder (4), an aluminum oxide bottom holder (5), a first zirconium oxide cover plate (6), a second zirconium oxide cover plate (13), an aluminum oxide positioning ring (7), an aluminum oxide upper heat preservation inner cylinder (8) and an zirconium oxide upper heat preservation outer cylinder (8). The technology comprises: preparation before charging, iridium crucible treatment, charging, feeding, first material melting, seed crystal preparation and adjustment, second material melting, air inflation, seed crystal preheating, crystal growth, and ending. According to the invention, the reasonable temperature field structure and the pulling growth technology thereof are designed, and the energy consumption is reduced on the premise of ensuring high temperature and temperature gradient required by growth. Necking is performed before shouldering, that is, the temperature is slightly high when pulling is started, so as to enable the diameter of a seed crystal to be reduced by about 1mm; then the temperature is reduced for shouldering, so as to prevent a seed crystal defect from extending into the crystal as far as possible.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a temperature field structure of a crystal pulling growth furnace and a pulling growth process thereof. Background technique [0002] The pulling method, also known as the Czochralski method, is a method for growing high-quality single crystals from a melt invented by J. Czochralski in 1917. This method enables the growth of important gemstone crystals such as colorless sapphire, ruby, yttrium aluminum garnet, gadolinium garnet, alexandrite and spinel. [0003] The basic principle of the pulling method: the pulling method is to heat and melt the raw materials constituting the crystal in a crucible, connect the seed crystal on the surface of the melt to pull the melt, and under controlled conditions, make the seed crystal and the melt at the interface The rearrangement of atoms or molecules is continuously carried out on the surface, and a single crystal is grown by gradually solidi...

Claims

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Application Information

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IPC IPC(8): C30B15/14
CPCC30B15/14
Inventor 吴玥
Owner 成都晶九科技有限公司
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