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Method for reducing sapphire crystal growth defects and sapphire crystal growth furnace

A sapphire crystal and sapphire technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as unusable and affecting product quality, reduce the amount of bubbles, reduce crystal growth defects, and ensure floating and discharge Effect

Active Publication Date: 2022-04-12
江苏吉星新材料有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The bubbles in the sapphire crystal will affect the quality of subsequent products, so it cannot be used in the optical field or LED substrate

Method used

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  • Method for reducing sapphire crystal growth defects and sapphire crystal growth furnace
  • Method for reducing sapphire crystal growth defects and sapphire crystal growth furnace
  • Method for reducing sapphire crystal growth defects and sapphire crystal growth furnace

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Embodiment Construction

[0028] It should be noted that, in the case of no conflict, the embodiments and features in the embodiments of the present invention can be combined with each other.

[0029] In the present invention, unless stated otherwise, the orientation or positional relationship indicated by the used orientation words such as "upper and lower" is based on the orientation or positional relationship shown in the drawings.

[0030] In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or a Integral connection; it can be a direct connection or an indirect connection through an intermediary, it can be the internal communication of two elements or the interaction relationship between two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in the...

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Abstract

The invention relates to sapphire crystal manufacturing, and discloses a method for reducing crystal growth defects of sapphire crystals, which comprises the following steps of: 1) controlling the relative positions of a heat exchanger arranged at the bottom of a crucible and a heater arranged at the periphery of the crucible, so that the height of the bottom end of the heater is lower than the height of the top of the heat exchanger; (2) controlling the filling method of the sapphire raw material in the crucible, filling the recycled raw material at the bottom of the crucible, filling the initial raw material at the periphery of other parts, and filling the recycled raw material in the middle; and (3) controlling the temperature of the sapphire liquid at different parts in the crucible in the heating process, and increasing the temperature gradient of the sapphire liquid at the bottom of the crucible and around the crucible. And the probability of bubble and hole defects in the produced sapphire crystal is lower. The invention also discloses a sapphire growth furnace.

Description

technical field [0001] The invention relates to the manufacture of sapphire crystals, in particular to a method for reducing crystal growth defects of sapphire crystals. The invention also relates to a sapphire crystal growth furnace. Background technique [0002] Sapphire (α-Al 2 o 3 ) crystal material is a colorless and transparent single crystal material with good light transmission, thermal conductivity and electrical insulation, and has high strength, high hardness (Mohs 9), high temperature resistance, good chemical stability, etc. A series of excellent comprehensive physical and chemical properties are widely used in many fields such as substrate substrates, laser substrates, and optical components in the field of microelectronics. At the same time, due to its super impact resistance and scratch resistance, high optical transmittance and radiation resistance, it is also used as high-end mobile phone panels and cover glass. [0003] The preparation methods of large...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/20
Inventor 翟虎宋亚滨秦俊
Owner 江苏吉星新材料有限公司
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