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ZrCo-based tritium storage material of film structure and preparation method

A technology of film structure and film thickness, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of poor uniformity of metal tritide film composition, poor anti-disproportionation performance, poor chemical stability, etc. , to achieve the effects of high controllability of film composition and thickness, excellent anti-disproportionation performance and excellent quality

Inactive Publication Date: 2019-02-22
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem solved by the present invention is to provide a ZrCo-based tritium storage material with a film structure, which solves the problems of low hydrogen storage capacity and poor disproportionation resistance of ZrCo tritium storage materials in the prior art
[0007] The present invention also provides a method for preparing a ZrCo-based tritium storage material with a thin film structure, which solves the problem of poor compositional uniformity and poor atomic ratio of metal tritide thin films in the prior art control , poor chemical stability, tritium storage performance Difference The problem

Method used

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  • ZrCo-based tritium storage material of film structure and preparation method

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Embodiment 1

[0033] This embodiment provides the preparation method of the ZrCo alloy-based tritium storage material with thin film structure of the present invention, specifically as follows:

[0034] Install the ZrCo alloy target on the magnetron sputtering apparatus, the power supply is 300W, the sputtering current is 70mA, the heating temperature of the sample stage is 200°C, the base distance of the target is 10cm, and the ultimate vacuum is 5×10 -6 Pa, the sputtering atmosphere is an argon atmosphere, and the gas pressure is 1Pa. A Si sheet was used as a deposition substrate, and the ZrCo-based tritium storage material with the thin film structure was obtained after sputtering for 100 min.

[0035] The ZrCo tritium storage material obtained by the deposition is annealed, the annealing temperature is 50° C., and the holding time is 300 min.

[0036] The XRD results of the thin film structure ZrCo tritium storage material obtained at last are as follows: figure 1 shown. It can be s...

Embodiment 2

[0040] This embodiment provides the preparation method of the ZrCo alloy-based tritium storage material with thin film structure of the present invention, specifically as follows:

[0041] Install the ZrCo alloy target on the magnetron sputtering apparatus, the power supply is 280W, the sputtering current is 90mA, the heating temperature of the sample stage is 700°C, the base distance of the target is 13cm, and the ultimate vacuum is 2×10 -6 , the sputtering atmosphere is an argon atmosphere, and the gas pressure is 1.5Pa. The Mo sheet was used as the deposition substrate, and the ZrCo-based tritium storage material with the film structure was obtained after sputtering for 190 minutes.

[0042] The ZrCo tritium storage material obtained by the deposition is annealed, the annealing temperature is 150° C., and the holding time is 30 minutes. The XRD results of the thin film structure ZrCo tritium storage material obtained at last are as follows: figure 1 shown. It can be see...

Embodiment 3

[0046] This embodiment provides the preparation method of the doped ZrCo alloy-based tritium storage material of the thin film structure of the present invention, specifically as follows:

[0047] Will Zr 0.75 Ti 0.25 The Co alloy target is installed on the magnetron sputtering apparatus, the power supply is 320W, the sputtering current is 60mA, the heating temperature of the sample stage is 300°C, the base distance of the target is 9cm, and the ultimate vacuum is 1×10 -5 , the sputtering atmosphere is an argon atmosphere, and the gas pressure is 2Pa. A Si sheet was used as a deposition substrate, and the ZrCo-based tritium storage material with the thin film structure was obtained after sputtering for 60 minutes.

[0048] The deposited ZrCo-based tritium storage material was annealed at a temperature of 350° C. and a holding time of 50 minutes.

[0049] The XRD results of the thin film structure ZrCo tritium storage material obtained at last are as follows: figure 1 show...

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Abstract

The invention discloses a ZrCo-based tritium storage material of a film structure and a preparation method and solves the problems that in the prior art, the ZrCo tritium storage material is small intritium storage capacity and poor in disproportionation resistance. The ZrCo-based tritium storage material of the film structure is prepared from ZrCo doped metal elements which are selected from oneor more of Ti, Hf, Ni and Fe, the atom percents by mass of which are 0-50%. The preparation method of the ZrCo-based tritium storage material of the film structure comprises the following steps: mounting an alloy target or / and a single element target on a magnetron sputtering instrument; controlling the heating temperature of a sample table at 100-950 DEG G, the target-substrate distance at 5-14cm, the ultimate vacuum of 1*10<-6> to 1*10<-4>Pa; carrying out sputtering in an inert atmosphere to obtain the ZrCo-based tritium storage material of the film structure; and annealing the ZrCo-basedtritium storage material. The preparation method provided by the invention is scientific in design and simple to operate.

Description

technical field [0001] The invention belongs to the field of hydrogen and isotope storage and supply, in particular to a ZrCo-based tritium storage material with a film structure and a preparation method. Background technique [0002] With the sharp reduction of fossil energy and the increasingly serious environmental problems, it has become an urgent task for mankind to develop a renewable clean energy. Fusion energy, which can release huge energy by burning deuterium-tritium plasma, but does not produce high-level radioactive waste, has attracted people's attention, such as the International Thermonuclear Experimental Reactor (ITER) under design and construction and the Chinese fusion Engineering Experimental Reactor (CFETR). As a fuel for fusion energy, since tritium is a precious resource and is radioactive, in order to maintain the normal operation of fusion reactors, deuterium-tritium gas should be stored, supplied and recovered safely, quickly and efficiently. There...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/16C23C14/18
CPCC23C14/165C23C14/185C23C14/35C23C14/352
Inventor 寇化秦包锦春叶荣兴何晖黄志勇张光辉
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS