Preparation method for supersaturated doping of semiconductor surface and maintaining lattice structure thereof

Abstract

The present invention discloses a preparation method for supersaturated doping of a semiconductor surface and maintaining a lattice structure thereof. A femtosecond laser irradiates a semiconductor toform a supersaturated doped layer on a surface. The femtosecond laser has a very short action time, extremely high instantaneous power, and a very fast temperature drop rate after the acted on the material, can lock large number of doping atoms in a crystal lattice through the instantaneous interaction with the doping atoms and the semiconductor lattice. The semiconductor is heated, the higher substrate temperature slows down the instantaneous ultra-fast temperature drop rate after femtosecond laser action, the defects are difficult to generate, thus maintaining the good lattice structure. The preparation method also has the advantages of simple process, easy processing and easy storage, and has high doping speed and high flexibility, and can perform processing in a large area and at a single point or along a preset path. The prepared supersaturated doped layer has a doping concentration of 1022 to 1016 Atoms / cm 3 in a depth range of 0 to 2000 nm from the surface, thereby achieving supersaturation doping while maintaining lattice structure and the doping atom activity.

Description

technical field [0001] The present invention relates to the field of semiconductor processing, in particular to a method for semiconductor doping, which is a preparation method for supersaturated doping on the surface of a semiconductor and maintaining its lattice structure. Background technique [0002] No matter from the perspective of technology or economic development, the importance of semiconductors is huge. Most of the electronic products that people use today, such as the core units in computers, mobile phones or digital recorders, are closely related to semiconductors. However, at room temperature, the carrier concentration in the intrinsic semiconductor is very low, the conductivity is small, and the carrier concentration is sensitive to temperature changes, so it is difficult to control the characteristics of the semiconductor. Therefore, the doping method has become an important method to improve the electrical properties of semiconductors. Among them, the supe...

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Problems solved by technology

Therefore, the application range of semiconductor devices is limited.

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