Ge-Si heterojunction bipolar transistor detector based on antenna direct matching

Abstract

The present invention provides a Ge-Si heterojunction bipolar transistor detector based on antenna direct matching. The detector comprises a first Ge-Si heterojunction bipolar transistor and a secondGe-Si heterojunction bipolar transistor, the bases of the first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor are connected with an antenna, emitting electrodes of the first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor are earthed, a collector of the first Ge-Si heterojunction bipolar transistor is connected with an output end through a first quarter-wave microstrip line, a collector of the second Ge-Si heterojunction bipolar transistor is connected with the output end through a second quarter-wave microstrip line, a capacitor is connected between the base of the first Ge-Si heterojunction bipolar transistor and the collector of the second Ge-Si heterojunction bipolar transistor, the capacitor is connected between the base of the second Ge-Si heterojunction bipolar transistor and the collector of the first Ge-Si heterojunction bipolar transistor, and the direct current offset line in theantenna is connected with a direct current bias voltage. The output response of the detector is increased.

Description

technical field [0001] The present invention relates to a transistor detector. In particular, it relates to a germanium-silicon heterojunction bipolar transistor detector based on direct matching of antennas. Background technique [0002] Terahertz waves have many unique characteristics: the penetrating properties of terahertz waves make them useful for security imaging [1]; terahertz waves are in the same wavelength band as the blackbody radiation of most of the cooling dust after the Big Bang. Imaging the universe paints a more detailed picture for people [2]; terahertz waves are at the same frequency as the vibrations of many biological macromolecules, which opens up new avenues for biomedical detection [3][4]; terahertz waves can provide The larger bandwidth provides the possibility for high-speed wireless communication in the future. At present, terahertz detectors based on field effect transistor structures have been proposed in China. However, under the same process...

AI Technical Summary

Problems solved by technology

[0003] The technical problems faced by terahertz detectors are: the signal power transmission efficiency between the terahertz wave antenna and the silicon-germanium heterojunction bipolar transistor is low; the leakage of the terahertz wave to the output terminal will greatly reduce The output responsivity of the detector increases the equivalent noise power of the detector

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