Semiconductor device and semiconductor integrated circuit

Abstract

The present invention provides a semiconductor device and a semiconductor integrated circuit, comprising: element isolation regions (14); projected semiconductor regions (11); a plurality of first gate electrodes (12A) which are formed between a pair of opposing ends of the element isolation regions and each of which is formed on both side surfaces and the top surface of a part of the projected semiconductor region; at least one second gate electrode (12B) which is formed between a pair of the plurality of first gate electrodes in the same layer as the plurality of first gate electrodes, and to which voltage to turn a transistor to an off state is applied; and source regions and drain regions formed in the projected semiconductor regions on both sides of the first gate electrode and the second gate electrode. By disposing, between transistors having the first gate electrodes, a transistor having the second gate electrode to which voltage to turn the transistor to an off state is applied, heat generated in the transistors is reduced without reducing the saturation current of the transistors.

Description

technical field [0001] The present invention relates to a semiconductor device and a semiconductor integrated circuit. Background technique [0002] There is a field effect transistor (Fin Field Effect Transistor: FinFET), which has gates formed on both sides and the upper surface of a part of a convex (fin-shaped) semiconductor region extending in one direction on a substrate. An electrode insulating film and a gate electrode are formed, and a rib-shaped structure of a source region and a drain region is formed in the convex semiconductor regions on both sides of the gate electrode (for example, refer to Patent Document 1). In its structure, FinFET is easy to leave heat, so it is necessary to find a way to reduce heat generation through layout. [0003] Figure 8 It is a diagram showing a configuration example of a FinFET having a multi-finger structure in which a plurality of gate electrodes are formed in a comb-tooth shape (finger shape). exist Figure 8 Among them, 101...

AI Technical Summary

Problems solved by technology

So in order to get the same as having for example Figure 8 The same saturation current Ion of the FinFET with multi-finger structure shown requires an increase in the number of transistors, resulting in an increase in power consumption and area

Images