Based on al/m x o y Interdigital Structure Transducer with Energetic Thin Film
An interdigitated structure and interdigitated technology, which is applied in the field of interdigitated structure transducers, can solve the problems of damage to the lower grain column and complex structure.
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Embodiment 1
[0033] Example 1: Transducer with rectangular interdigitated structure
[0034] Such as Figure 1~3 As shown, the rectangular interdigitated structure transducer element includes 1 μm SiO on the surface 2 Si substrate 1 of layer 2, Al thin film electrode 3 and M x o y The dielectric layer 4 as a whole includes two parts, the pad and the bridge area, the size of which is 1.7mm*1.5mm, and the size of the bridge area is 1.0mm*1.5mm. Among them, the interfingers of the Al thin film electrode 3 have a width of 0.025 mm, a distance of 0.025 mm, and a length of 0.8 mm (0.2 mm is reserved for the edge of the electrode at the other end to prevent breakdown of the edge of the electrode). Both ends of the bridge area are pads for connecting to an external excitation power supply. The thickness of Al thin film electrode is 500nm, M x o y The dielectric layer is 800nm.
[0035] The electric explosion transducer element can be applied to the ignition of electric pyrotechnics, and can...
Embodiment 2
[0036] Embodiment 2: Circular interdigitated structure transducer element
[0037] Such as Figure 4~6 As shown, the circular interdigitated structure transducer element includes 1 μm SiO on the surface 2 Si substrate 1 of layer 2, Al thin film electrode 3 and M x o y Dielectric layer 4. The whole includes two parts, the pad and the bridge area, the size is 1.7mm*1.5mm, and the size of the bridge area is a circle with R=0.45mm. The center of the bridge area is a circle with a diameter of 0.075mm, the distance between the rings of the ring fingers of the Al thin film electrode 3 is 0.025mm, the width of the ring electrode is 0.025mm, and the two ends of the electrode are semicircular rounded corners with a diameter of 50nm. The pads at both ends are 3mm*4mm respectively, and are connected to an external excitation power supply. The thickness of Al thin film electrode is 500nm, M x o y The thickness of the dielectric layer is 800nm.
[0038] with Al / M x o y Compared wi...
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