Manufacturing method of 3D memory device
A technology for storage devices and manufacturing methods, which is applied in the field of storage, and can solve the problems that wiring density affects the yield and reliability of 3D storage devices, etc.
Active Publication Date: 2021-04-09
YANGTZE MEMORY TECH CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
In this 3D memory device, a large number of metal wirings are used to provide the electrical connection between the CMOS circuit and the memory cell array, and the increase in wiring density will affect the yield and reliability of the 3D memory device.
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[0026] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.
[0027] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.
[0028] If it is to describe the situation directly on another layer or an...
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A method for manufacturing a 3D memory device is disclosed, comprising: forming a CMOS circuit, including a first bonding surface, and a first external pad exposed on the first bonding surface; forming a memory cell array, including a second A bonding surface, and a second external pad exposed on the second bonding surface; bonding the CMOS circuit and the memory cell array into the 3D memory device, wherein the first bonding surface In contact with the second bonding surface, the first external pad and the second external pad are bonded to each other; the CMOS circuit further includes a plurality of first bonding pads formed on the first bonding surface A groove, and / or the memory cell array further includes a plurality of second grooves formed on the second bonding surface, the plurality of first grooves and the plurality of second grooves form cooling channels. The yield and reliability of 3D memory devices are improved by forming grooves on the bonding surfaces of CMOS circuits and memory cell arrays to provide heat dissipation channels.
Description
technical field [0001] The present invention relates to the technical field of memory, and more specifically, to a method for manufacturing a 3D memory device. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Comp...
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IPC IPC(8): H01L27/1157H01L27/11582H01L27/11573H01L27/02H10B43/35H10B43/27H10B43/40
CPCH01L27/0211H10B43/40H10B43/35H10B43/27
Inventor 胡斌肖莉红
Owner YANGTZE MEMORY TECH CO LTD