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Method for preparing ohmic contact electrode of P-type negative temperature coefficient ceramic material

An ohmic contact electrode, negative temperature coefficient technology, applied in the direction of resistors with negative temperature coefficient, resistance manufacturing, resistors with terminals, etc., can solve the problem of low contact resistance, to solve the problem of penetration, maintain flatness and The effect of thermal stability

Inactive Publication Date: 2019-03-12
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method uses a metal with a higher work function as the transition layer, which makes the contact resistance between the metal and the ceramic body lower, and the transition layer solves the problem of silver penetration in the negative temperature coefficient ceramic firing silver electrode.

Method used

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  • Method for preparing ohmic contact electrode of P-type negative temperature coefficient ceramic material
  • Method for preparing ohmic contact electrode of P-type negative temperature coefficient ceramic material
  • Method for preparing ohmic contact electrode of P-type negative temperature coefficient ceramic material

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Effect test

Embodiment 1

[0020] a. Select the existing quaternary system cobalt, manganese, iron and zinc P-type negative temperature coefficient ceramic materials as the ceramic substrate 3, then use alcohol and deionized water to ultrasonically clean the P-type negative temperature coefficient ceramic substrate 3 respectively, and clean The time is 30 minutes and 10 minutes respectively, and then the cleaned P-type negative temperature coefficient ceramic substrate 3 is put into an oven at a temperature of 100° C. for 30 minutes;

[0021] b. Cover the mask plate on the P-type negative temperature coefficient ceramic substrate 3 obtained in step a, and use DC magnetron sputtering to vapor-deposit a 35nm Pd transition layer 2 with a purity of 99.99% on the P-type negative temperature coefficient ceramic substrate 3 , and then vapor-deposit 400nm of Ag with a purity of 99.99% as the soldering layer 1, wherein the magnetron sputtering condition is that the background vacuum degree of the equipment is 1.5...

Embodiment 2

[0024] a. Select the existing quaternary system cobalt, manganese, iron and zinc P-type negative temperature coefficient ceramic materials as the ceramic substrate 3, then use alcohol and deionized water to ultrasonically clean the P-type negative temperature coefficient ceramic substrate 3 respectively, and clean The time is 30 minutes and 10 minutes respectively, and then the cleaned P-type negative temperature coefficient ceramic substrate 3 is put into an oven at a temperature of 100° C. for 30 minutes;

[0025] b. Cover the mask plate on the P-type negative temperature coefficient ceramic substrate 3 obtained in step a, and use DC magnetron sputtering to vapor-deposit a 70nm Ni transition layer 2 with a purity of 99.99% on the P-type negative temperature coefficient ceramic substrate 3 , and then vapor-deposit 400nm of Ag with a purity of 99.99% as the soldering layer 1, wherein the magnetron sputtering condition is that the background vacuum degree of the equipment is 1.5...

Embodiment 3

[0028] a. Select the existing quaternary system cobalt, manganese, iron and zinc P-type negative temperature coefficient ceramic materials as the ceramic substrate 3, then use alcohol and deionized water to ultrasonically clean the P-type negative temperature coefficient ceramic substrate 3 respectively, and clean The time is 30 minutes and 10 minutes respectively, and then the cleaned P-type negative temperature coefficient ceramic substrate 3 is put into an oven at a temperature of 100° C. for 30 minutes;

[0029] b. Cover the mask plate on the P-type negative temperature coefficient ceramic substrate 3 obtained in step a, and use DC magnetron sputtering to vapor-deposit a 100nm Pd transition layer 2 with a purity of 99.99% on the P-type negative temperature coefficient ceramic substrate 3 , and then vapor-deposit 400nm of Ag with a purity of 99.99% as the soldering layer 1, wherein the magnetron sputtering condition is that the background vacuum degree of the equipment is 1....

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Abstract

The invention relates to a method for preparing an ohmic contact electrode of a P-type negative temperature coefficient ceramic material. The method comprises the following steps: using the DC magnetron sputtering technology and using the existing quaternary cobalt-manganese-iron-zinc P-type negative temperature coefficient ceramic material as a ceramic matrix, firstly evaporating the first layerof 35nm-1200nm Pd or Ni on the surface of the ceramic substrate to serve as a transition layer, then evaporating a layer of 400 nm Ag to serve as a welding layer, and then rapidly annealing at a temperature of 400-800 DEG C to obtain an electrode having good ohmic contact. The test results show that the electrode has good ohmic contact, firm adhesive force, good solderability and stability. According to the method, the metal with a higher work function is used as the transition layer to lower the contact resistance of the metal and the ceramic body, and the transition layer also solves the problem of silver penetration in a P-type negative temperature coefficient ceramic sintered silver electrode.

Description

technical field [0001] The invention relates to a method for preparing an ohmic contact electrode of a P-type negative temperature coefficient (NTC) ceramic material. Background technique [0002] Negative temperature coefficient thermistor ceramics have high stability, high sensitivity, good reliability and low price, and are widely used in temperature control, temperature compensation, temperature measurement and other aspects. Not only the chemical composition, preparation process and precision processing technology of NTC thermosensitive ceramics play a decisive role in the performance of thermosensitive ceramics, but also the electrode layer attached to the surface of the ceramic body plays a vital role in the performance of NTC thermistor. At present, the method of preparing negative temperature coefficient (NTC) thermistor electrodes at home and abroad is the silver paste firing method. The negative temperature coefficient (NTC) thermistor prepared by this method has...

Claims

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Application Information

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IPC IPC(8): H01C17/28H01C7/04
CPCH01C7/043H01C17/288
Inventor 姚金城陈计好王军华王兵常爱民
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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