Wafer etching equipment and wafer etching method

Abstract

The invention provides wafer etching equipment and a wafer etching method. The wafer etching equipment comprises an etching cavity that provides an etching gas containing HBr so as to etch a wafer; and a heat treatment cavity including a heating system and an exhaust system, wherein the working temperature of the heat treatment cavity is not smaller than the working temperature of the etching cavity, the wafer enters the heat treatment cavity after being etched by the etching cavity, and residual HBr on the surface of the wafer is removed through the heating system and the exhaust system. According to the wafer etching equipment provided by the invention, through the heat treatment cavity including the heating system and the exhaust system, the residual HBr on the surface of the wafer is removed without cooling the wafer, so that the corrosion of the hydrobromic acid to a semiconductor device is reduced, and the service life of the semiconductor device is prolonged; and the generationof HBr condensation on the surface of the wafer is reduced, and the product quality is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a wafer etching device and a wafer etching method. Background technique [0002] Semiconductor etching technology is usually divided into wet etching (wet etching) and dry etching (dry etching), which is a very important step in semiconductor manufacturing process, microelectronics manufacturing process and micro-nano manufacturing process. Among them, dry etching is more and more widely used because it can make circuit patterns finer. [0003] In the field of semiconductor manufacturing, HBr is often used as the main etching gas in dry etching, such as in the process of etching single crystal silicon to prepare shallow trench insulation (STI) or etching polysilicon to prepare gates in the process of. After the etching is completed, HBr is likely to remain on the surface of the wafer, and according to the strong acidity of HBr, after HBr is cooled, on the one hand, HBr ...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a wafer etching device and a wafer etching method, which are used to solve the semiconductor problem caused by the residual HBr on the wafer surface in the existing etching process. Problems of equipment corrosion and low product quality

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