Preparation method of polarized infrared detector based on thin film bulk acoustic resonator

A thin-film bulk acoustic wave and infrared detector technology, applied in the field of infrared detection, can solve the problems of low spatial resolution, low energy utilization rate, unstable structure, etc., and achieve the effects of small size, optimized structure and performance, and low cost

Active Publication Date: 2020-11-03
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The time-sharing polarization detector obtains the information of different polarization directions at different time points by rotating the polarizer. Although this technology is simple, the structure is unstable and it is easy to produce virtual images; the amplitude-sharing polarization detector is composed of multiple different focal planes , each focal plane optical path has polarizers in different directions. This system can effectively reduce the virtual image caused by target movement, but the energy utilization rate is low, the volume is large, and the price is expensive; the split-aperture polarization detector is controlled by the optical path. Images with different polarization directions are projected to different areas of the focal plane. Compared with the sub-amplitude system, its optical path is shorter, and the optical path is less likely to be disturbed after alignment, but its spatial resolution is low and its volume and weight are large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of polarized infrared detector based on thin film bulk acoustic resonator
  • Preparation method of polarized infrared detector based on thin film bulk acoustic resonator
  • Preparation method of polarized infrared detector based on thin film bulk acoustic resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0051] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0052] The present invention is based on the preparation method of the polarized infrared detector of the film bulk acoustic resonator, and concrete steps are as follows:

[0053] S1. Obtain silicon substrate 2-6

[0054] Such as figure 1 As shown, silicon substrates 2-6 are obtained; silicon substrates 2-6 are high-resistance double-throw silicon wafers commonl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The preparation method of the polarized infrared detector based on the thin film bulk acoustic resonator relates to the field of infrared detection technology, and solves the problems that the infrared detector obtained by the preparation method has a low absorption rate and the structure and performance of the infrared polarized detector need to be improved, including the preparation of thin films Bulk acoustic resonator; metal reflective layer, medium layer and metal array layer are sequentially prepared on the thin film bulk acoustic resonator; the readout integrated circuit substrate is prepared; the readout integrated circuit substrate and the thin film bulk acoustic resonator are connected; the metal array layer is composed of It consists of a plurality of metal units with the same characteristic direction. The preparation method of the present invention has the advantages of integrated manufacturing, batch production, and low cost; the metal array layer is used to realize polarized light absorption and enhanced absorption of the infrared spectrum, and the absorbed energy acts on the thin film bulk acoustic wave resonator to increase the absorption rate; preparation The infrared detector is small in size and low in cost, has the advantages of traditional uncooled infrared detection, and has fast response and high detection sensitivity.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to a preparation method of a polarized infrared detector based on a film bulk acoustic wave resonator. Background technique [0002] Uncooled infrared detectors are also called room temperature detectors, which can work at room temperature without refrigeration, so they have the advantages of being more portable. Uncooled infrared detectors are generally thermal detectors, that is, they work by detecting the thermal effect of infrared radiation. Uncooled infrared detectors have advantages over cooled infrared detectors in terms of volume, weight, lifespan, cost, power consumption, start-up speed and stability because they omit the bulky and expensive refrigeration mechanism. However, there is a gap in response time and detection sensitivity compared with cooled infrared detectors. [0003] In recent years, with the development of micro-nano sensing technology, the appli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00B81B7/02G01J5/10
CPCB81B7/0009B81B7/02B81C1/00222G01J5/10
Inventor 梁中翥陶金孟德佳梁静秋秦余欣吕金光
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products