Anti-fuse memory self-detection and self-repair method
A memory and anti-fuse technology, applied in the fields of automatic control and electronic applications, can solve problems such as low yield of memory circuits, and achieve the effects of improving flexibility, ensuring correctness, and reducing maintenance and use costs
Inactive Publication Date: 2019-03-26
NO 47 INST OF CHINA ELECTRONICS TECH GRP
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[0003] Aiming at the deficiencies in the prior art, the present invention provides a method for self-testing and self-repairing of anti-fuse memory, which solves the problem of low yield rate of memory circuits and improves yield rate
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[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
[0024] In order to make the above-mentioned purpose, features and advantages of the present invention more obvious and understandable, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without violating the connotation of the invention, so the present invention is not limited by the specific implementation disclosed below.
[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by on...
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The invention relates to an anti-fuse memory self-detection and self-repair method. The anti-fuse memory is provided with a redundant storage unit; The programmer writes data into the current address,performs programming operation, performs reading operation on the programmed address after programming is finished, and sends the read data to the programmer through a bus; Wherein the programmer sends read data to the upper computer, the upper computer compares the read data with written data and sends a comparison result to the programmer, if the comparison result is consistent, programming operation of a next address is carried out, and if the comparison result is inconsistent, the redundant storage unit is used for replacing an address unit generating the result. The reliability of the memory circuit is improved by using a redundant structure, self-detection and self-repair are carried out in the same chip, the flexibility of circuit adjustment is improved, the universality of the circuit is improved, and the maintenance and use cost of the circuit is reduced.
Description
technical field [0001] The invention relates to the field of automatic control and electronic application, in particular to a self-testing and self-repairing method of an anti-fuse memory. Background technique [0002] The current memory is getting bigger and bigger. In the wafer production process, due to the complex process and many process steps (about 300 steps), especially the memory circuit unit, it will inevitably lead to the loss of yield rate. The larger the memory capacity, There will inevitably be a loss of a certain number of units, and the damage of one address in the storage unit will cause the loss of the entire chip, reducing the yield of the product, and the loss of the yield rate in the memory process is inevitable, but from the circuit design method, Replacing the damaged address unit with a redundant memory unit can save the whole chip, so the memory repair technology becomes the key technology of the memory circuit. The repair of the memory is to add re...
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Login to View More IPC IPC(8): G11C29/18G11C29/44G11C17/16
CPCG11C17/16G11C29/18G11C29/4401G11C2029/4402
Inventor 孙轶君
Owner NO 47 INST OF CHINA ELECTRONICS TECH GRP