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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor device, semiconductor/solid-state device components, etc., can solve the problems of cracked interlayer insulating film, high hygroscopicity, easy to deteriorate over time, etc.

Inactive Publication Date: 2019-03-29
TOSHIBA MEMORY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The OH group acts as moisture to cause a leakage current between the TSV and the substrate, or evaporates to cause cracks or peeling off of the interlayer insulating film
In addition, this spacer layer is highly hygroscopic and tends to deteriorate over time

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0020] Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment does not limit the present invention. In the following embodiments, the vertical direction of the semiconductor substrate represents the relative direction when the side on which the TSVs are formed is set upward, and may be different from the vertical direction following the acceleration of gravity.

[0021] Figure 1 ~ Figure 4 (B) is a cross-sectional view showing an example of the method of manufacturing the semiconductor device of the present embodiment. The semiconductor device may be, for example, a semiconductor chip having a NAND (Not And) type EEPROM (Electrically Erasable and Programmable Read-Only Memory, Electrically Erasable Read-Only Memory). Hereinafter, a method of forming TSVs 40 on a semiconductor wafer will be mainly described.

[0022] First, if figure 1 As shown, an STI (Shallow Trench Isolation, Shallow Trench Isolation) 20 is fo...

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PUM

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Abstract

In a manufacturing method of a semiconductor device according to the present embodiment, a semiconductor substrate, which has a first face and a second face, is bonded to a support substrate with thefirst face facing toward the support substrate. The first face has a semiconductor element. The second face is located opposite to the first face. The semiconductor substrate is processed from the second face to form a contact hole to reach the first face from the second face. A first insulation film is formed on an inner surface of the contact hole. A metal is embedded on the first insulation film in the contact hole to form a metal electrode. The formation of the first insulation film is performed by plasma CVD in an atmosphere of 200DC. or lower, containing a gas containing silicon and oxygen, an oxygen-containing gas, and an NH-group containing gas.

Description

[0001] [Related application] [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2017-181435 (filing date: September 21, 2017). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a method of manufacturing a semiconductor device. Background technique [0004] Semiconductor chips such as semiconductor memories may be laminated from the standpoint of higher functionality and higher integration. In order to electrically connect elements between a plurality of stacked semiconductor chips, through electrodes called TSVs (Through-Silicon Vias) are used. The TSV is electrically connected to elements of other semiconductor chips through the semiconductor substrate. [0005] In order to electrically insulate the TSV from the substrate, a spacer layer is formed on the inner surface of the TS...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L24/26H01L24/27H01L21/02126H01L21/02216H01L21/02274H01L21/76898H01L23/481H01L21/76831H01L21/76841H01L21/02164H10B69/00
Inventor 奥田真也
Owner TOSHIBA MEMORY CORP