Plasma-reinforced carbon nanotube growth device

Abstract

The invention discloses a plasma-reinforced carbon nanotube growth device. The plasma-reinforced carbon nanotube growth device comprises a radio-frequency controller, an air inlet, a coil, a preheating furnace, a heating furnace, a quartz tube, a touch control screen, an air suction opening, a slide rail, a device frame and a radio-frequency power source, wherein the platform surface of the top part of the device frame is fixedly provided with the quartz tube through two supporting seats; one end of the quartz tube is connected with a vacuum flange which is provided with the air inlet; the quartz tube successively penetrates through the radio-frequency power source, the preheating furnace and the heating furnace which are arranged at the top part of the device frame; the other end of the quartz tube is connected with a vacuum flange which is provided with the air suction opening; the platform surface of the top part of the device frame is horizontally provided with the slide rail; thepreheating furnace is placed on the slide rail to slide; and the platform surface of the top part of the device frame is fixedly provided with the touch control screen. The plasma-reinforced carbon nanotube growth device provided by the invention enables a Fe component to be constant, has controllable diameter and can well control the growth quality of carbon nanotubes.

Description

technical field [0001] The invention relates to the technical field of PE and catalyst double-promoted carbon nanotube growth equipment, in particular to a plasma-enhanced carbon nanotube growth equipment. Background technique [0002] With the help of radio frequency power supply, the carbon source gas containing the atoms of the film components is ionized, and the plasma is formed locally to produce a glow phenomenon, and the plasma chemical activity is very strong, and it is easy to react, and the desired carbon nanometer is deposited on the substrate covered with the catalyst film. Tube. [0003] In order to enable the chemical reaction to proceed at a lower temperature, the activity of the plasma is used to promote the reaction, and the bombardment of the surface of the substrate by the excessively strong plasma is enhanced, increasing the internal stress of the film and the substrate, and making the internal defects such as the crystal lattice Due to the ion-induced d...

AI Technical Summary

Problems solved by technology

[0003] In order to enable the chemical reaction to proceed at a lower temperature, the activity of the plasma is used to promote the reaction, and the bombardment of the surface of the substrate by the excessively strong plasma is enhanced, increasing the internal stress of the film and the substrate, and making the internal defects such as the crystal lattice Due to the ion-induced damage of nano-catalysts and CNTs bombarded by high-energy ions, CNFs and MWCNTs will inevitably appear during low-pressure PECVD growth; resulting in a decrease in film quality

[0004] In the existing process of growing carbon nanotubes on the Fe-coated Al substrate, the Fe coating of the catalyst is a single layer. Due to the presence of a carbon layer on the surface of the catalyst, the catalyst loses its activity and can only grow single-layer or few-layer carbon nanotubes. The amount of growth is extremely limited; there are also experiments through the introduction of O 2 oxidized Fe, but O 2 The presence of will greatly reduce the quality of carbon nanotube growth

Images