Terahertz enhancement method and system based on semiconductor plated porous metal film structure

A metal thin film and semiconductor technology, applied in solid-state lasers, instruments, measuring devices, etc., can solve the problem of not being able to fundamentally improve the upper limit of terahertz wave energy, and achieve the effect of enhancing nonlinear coefficients and surface electron emission capabilities

Active Publication Date: 2019-04-02
GUANGDONG ROI OPTOELECTRONICS TECH CO LTD +2
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  • Abstract
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Problems solved by technology

However, none of these methods can fundamentally i

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  • Terahertz enhancement method and system based on semiconductor plated porous metal film structure
  • Terahertz enhancement method and system based on semiconductor plated porous metal film structure
  • Terahertz enhancement method and system based on semiconductor plated porous metal film structure

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Embodiment Construction

[0030] The specific structure of the terahertz wave enhancement system based on the semiconductor coated nanometer mesoporous metal thin film structure is as follows: figure 1 As shown, it includes a femtosecond pulsed laser module 100 , a terahertz wave generation module 200 and a terahertz detection module 300 . The femtosecond pulse laser module 100 is used to output the femtosecond pulse laser, and the femtosecond pulse laser is used as a pump light source for generating terahertz waves; the terahertz wave generation module 200 is excited by the femtosecond pulse laser to generate strong field Hertzian wave; the terahertz detection module 300 is used to detect the strong-field terahertz wave generated by the terahertz wave generation module 200 .

[0031] The femtosecond pulsed laser module 100 includes a fiber optic femtosecond pulsed laser 101 and a beam splitter 102, and the terahertz wave generation module 200 includes plane mirrors 201, 202, 203, 204, a focusing lens ...

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Abstract

The invention provides a preparation method of a nano-mesoporous metal film structure for enhancing field terahertz wave radiation. The preparation method comprises the following steps of: first, preparing an alloy film containing at least two metal elements; then, chemically etching at least one of the metal elements to obtain a metal film having a rough surface and containing a large amount of nano-mesoporous inside under certain conditions; and plating the metal film having a rough surface and containing a large amount of nano-mesoporous onto the surface of a semiconductor substrate. The nano-mesoporous metal film structure obtained by the method can fundamentally increase the upper limit of the energy of the terahertz wave, thereby obtaining a strong field terahertz wave.

Description

technical field [0001] The invention belongs to the field of terahertz wave generation, and mainly relates to a system for increasing the conversion efficiency of terahertz waves by using a semiconductor-plated nano-mesoporous metal structure, a semiconductor-plated nano-mesoporous metal structure and a preparation method thereof. Background technique [0002] Terahertz wave is the frequency of 0.1 ~ 10THz (1THz = 10 12 Hz), between the microwave and infrared bands of the electromagnetic spectrum. Terahertz wave is an interdisciplinary field of macroelectronics and microphotonics research. In addition to the wave-particle duality of electromagnetic waves, it also has low energy, coherence, transient, high penetration, spectral fingerprint characteristics, broadband Therefore, terahertz waves have great applications in the fields of cosmic background radiation, biomedical imaging, cancer detection, drug detection, explosive detection, nondestructive imaging, security inspect...

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Application Information

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IPC IPC(8): G01N21/3586H01S1/02
CPCG01N21/3586H01S1/02
Inventor 曾和平南君义李敏张玲
Owner GUANGDONG ROI OPTOELECTRONICS TECH CO LTD
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