Image sensor and formation method thereof

A technology of image sensors and switching devices, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as image smearing, image influence, photogenerated carrier photoelectric conversion layer residue, etc., to reduce the possibility and improve quality, image quality enhancement effects
CN109560098AInactive Publication Date: 2019-04-02HUAIAN IMAGING DEVICE MFGR CORP
3 Cites 2 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HUAIAN IMAGING DEVICE MFGR CORP
Publication Date
2019-04-02
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Disclosed are an image sensor and a formation method thereof. The image sensor comprises a semiconductor substrate, a metal interconnection layer, at least three layers of stacked photoelectric conversion layers, and a liner structure, wherein logic devices and a unidirectional conduction structure are formed in the semiconductor substrate; the metal interconnection layer is located on the surfaceof the semiconductor substrate, wherein a drain interconnection structure and a logic interconnection structure are arranged in the metal interconnection layer; the at least three layers of stacked photoelectric conversion layers are located on the surface of the metal interconnection layer, wherein the different photoelectric conversion layers are electrically connected to different logic devices through the logic interconnection structure; and the liner structure which is positioned on the surfaces of at least three layers of stacked photoelectric conversion layers, wherein the at least three layers of stacked photoelectric conversion layers are electrically connected with the liner structure through the drain interconnection structure and the unidirectional conduction structure. By virtue of the scheme, photon-generated carriers in the photoelectric conversion layers can be guided out, so that the possibility of image streaking is lowered.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique

[0002] The image sensor is the core component of the camera equipment, which realizes the image capture function by converting the optical signal into an electrical signal. Taking a CMOS image sensor (CMOS Image Sensors, CIS) device as an example, due to its advantages of low power consumption and high signal-to-noise ratio, it has been widely used in various fields.

[0003] However, in the prior art, the ion implantation process is used to form the photodiode (PhotoDiode, PD) in the pixel device, which is easy to cause damage to the semiconductor substrate, and the size of the manual pixel device is limited, and the size of the photodiode is often small, resulting in There are fewer photogenerated carriers; and in the process of forming the optical filter matrix, the production cost is rel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More