Insulated gate bipolar transistor junction temperature measuring method

A technology of bipolar transistors, measuring methods, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc.

Inactive Publication Date: 2019-04-05
TIANJIN CHENGJIAN UNIV
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a method for measuring the junction temperature of an IGBT module in order to solve the problem of accurate monitoring of the junction temperature of the IGBT module. The method takes the collector-emitter voltage of the IGBT module as the measurement variable, and considers the internal circuit structure and parasitic Influenced by parameters, an accurate junction temperature measurement scheme is proposed

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  • Insulated gate bipolar transistor junction temperature measuring method
  • Insulated gate bipolar transistor junction temperature measuring method
  • Insulated gate bipolar transistor junction temperature measuring method

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Embodiment Construction

[0030] Below in conjunction with accompanying drawing and example the present invention is described further:

[0031] The example of the present invention is to take the three-phase two-level power converter as an example to realize an accurate junction temperature measurement method of the IGBT module. The specific implementation of the measurement method is as follows:

[0032] Step 1: Complete the extraction of the parasitic resistance of all circuits outside the IGBT chip inside the IGBT module.

[0033] figure 1 The circuit model of the internal parasitic parameters of the IGBT module is given. The circuit of this model consists of four parts: gate part, collector part, emitter part and IGBT / diode chip part. The method of obtaining the junction temperature through the collector-emitter voltage of the IGBT module is based on the collector-emitter voltage of the IGBT / diode chip part. The main collector impedance Z in the collector-emitter circuit C , emitter impedance ...

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Abstract

The invention discloses an insulated gate bipolar transistor junction temperature measuring method. An insulated gate bipolar transistor (IGBT) is a key part which seals an internal circuit of the insulated gate bipolar transistor through a shell. With the continuous expansion of IGBT module application fields, the reliability of the IGBT has an important impact on power converters applied in various fields. An important method to study the reliability of the IGBT is to accurately obtain a junction temperature of an IGBT module. Because the IGBT module is sealed, voltage between a collector and an emitter of the IGBT module is usually used for obtaining indirectly. The invention provides an accurate junction temperature measuring technical scheme of the IGBT module, the working characteristic of an IGBT chip along with temperature change are adopted, voltage of the collector-emitter of the IGBT module is adopted to obtain an electrical signal to indirectly obtain the junction temperature. The insulated gate bipolar transistor junction temperature measuring method is a fast and accurate junction temperature measuring method based on the voltage of the collector-emitter of a power semiconductor device, and certain universality is achieved.

Description

technical field [0001] The present invention relates to an accurate junction temperature measurement technology for power semiconductor devices, in particular to a method for measuring the internal chip junction temperature of an insulated gate bipolar transistor (IGBT for short) commonly used in power electronic systems. A fast and accurate junction temperature measurement method based on the collector-emitter voltage of power semiconductor devices. Background technique [0002] IGBTs are widely used in various industries due to their high efficiency, such as electric vehicles, aerospace, railway transportation and new energy development. In many cases, the working environment of IGBT is quite harsh, such as high temperature, high voltage, high current, etc., which has a great impact on the life of the IGBT module. Power converters are the least reliable part of an electrical system in harsh operating environments. Because the failed power device cannot meet the working r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2619
Inventor 胡静
Owner TIANJIN CHENGJIAN UNIV
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