A Method for Improving Pattern Etching at Substrate Defects

Abstract

The invention provides a pattern etching method for improving a substrate defect. The method is used for a focused ion beam machine. A substrate is placed on the sample stage of the focused ion beam machine. The sample stage is grounded. The substrate is electrically conductive and is covered with an insulating layer. The defect is located on the insulating layer. A trench is produced on the insulating layer at a position having a lateral distance of 5 to 10 [mu]m to the defect and a conductive layer is formed to fill the trench and cover the surface of the insulating layer. The conductive layer is used for providing a conductive channel. By preparing the conductive channel, a grounding effect is achieved. The charges on the insulating layer can be moved away such that an etched pattern near the defect is improved. Thus, the pattern etching at the defect of the substrate is improved, the timeliness of the process defect analysis is improved, work efficiency is improved and economic losses are reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for improving pattern etching at substrate defects. Background technique [0002] With the further development of semiconductor technology, based on the consideration of efficiency and cost reduction, semiconductor factories need to make judgments on process defects in a short time to reduce losses. Focused ion beam machines use focused ion beams to micro-cut samples. A device for analyzing defects buried in the surface of a sample. The use of focused ion beam equipment greatly improves the timeliness of process defect analysis. [0003] figure 1 It is a schematic diagram of the accumulation of charges 2 on the insulating layer on the surface of a wafer in the prior art, [0004] figure 2 It is a schematic electronic scanning diagram of the offset and distortion of the etched pattern caused by the charge 2 accumulated on the insulating layer...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for improving the pattern etching at the defect of the substrate, so as to solve the problem in the prior art that the ion beam is deflected due to the accumulation of charges on the insulating layer on the surface of the substrate

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