Thin film resistor structure

Abstract

Disclosed is a thin film resistor structure. The thin film resistor structure comprises a conductive layer and an indium tin oxide layer deposited on one surface of the conductive layer; at least onefirst etching distance exposed to the indium tin oxide layer is etched on the surface of the conductive layer; the angle between the first etching distance and the indium tin oxide layer ranges from 90 degrees to 120 degrees; the resistance value of the thin film resistor can be regulated and controlled between 5 omega / square and 375 omega / square; by means of the structure, the thin film resistorstructure is high in surface uniformity, high in stability, and more excellent in control of crystallization density and the resistance regulation degree, so that it is beneficial to improvement of low-order products and application of high-order products.

Description

technical field [0001] The invention relates to a thin-film resistance structure, in particular to a thin-film resistance structure capable of reducing the angle increase caused by etching potion affecting a non-etching layer, and improving uniformity and high frequency. Background technique [0002] From Figure 5 It can be seen that a conventional thin-film resistor 30 is formed by disposing a nickel-phosphorus alloy layer 32 on a copper foil layer 34 , and then etching the copper foil layer 34 to achieve the resistance function through electrons passing through the nickel-phosphorus alloy layer 32 . However, due to the different particle sizes on the surface of the conventional thin film resistor 30 and the random stacking of structures, the surface uniformity is poor, which makes the electron migration path long and leads to poor resistance. In addition, because the film-forming crystals on the surface of the conventional thin-film resistor 30 have different sizes and lo...

AI Technical Summary

Problems solved by technology

However, due to the different sizes of particles on the surface of the conventional thin film resistor 30 and the scattered stacking of structures, the surface uniformity is poor, which makes the electron migration path long and leads to poor resistance.

In addition, because the film-forming crystals on the surface of conventional thin-film resistors 30 have different sizes and loose structures, the control of the manufacturing process is relatively unstable, and the product quality cannot be improved, which limits the scope of application.

[0003] Furthermore, the same chemical solution is used for the etching of conventional thin-film resistors. In other words, the above-mentioned chemical solution must be able to etch each layer structure at the same time. change in size

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