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A spontaneous polarization field-enhanced ultraviolet light detector based on beznos quaternary alloy and its preparation method

A quaternary alloy and spontaneous polarization technology, which is applied in the manufacture of electrical components, semiconductor devices, and final products, can solve the problems of increasing the complexity of the process and not considering the polarity of the film, so as to achieve high precision and good detection ability , enhance the effect of separation and transmission

Active Publication Date: 2020-02-18
HUBEI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology uses a buffer layer inserted between the active layer and the substrate to improve the crystal quality, which greatly increases the complexity of the process.
In addition, this technology only directly prepares the thin film into a detector, without considering the polarity of the thin film

Method used

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  • A spontaneous polarization field-enhanced ultraviolet light detector based on beznos quaternary alloy and its preparation method
  • A spontaneous polarization field-enhanced ultraviolet light detector based on beznos quaternary alloy and its preparation method
  • A spontaneous polarization field-enhanced ultraviolet light detector based on beznos quaternary alloy and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Such as figure 1 As shown, a kind of spontaneous polarization field-enhanced ultraviolet light detector based on BeZnOS quaternary alloy in this embodiment, the detector includes an m-plane sapphire substrate, an active layer, a pair of parallel metal Al An electrode, wherein: the active layer is an m-plane BeZnOS quaternary alloy thin film, and the parallel metal electrodes are perpendicular to the c-axis direction of the BeZnOS quaternary alloy thin film. The thickness of the substrate is 0.43 mm, the thickness of the active layer is 120 nm, the thickness of the Al electrode is 50 nm, and the distance between the parallel electrodes is 10 μm.

[0051] The above-mentioned spontaneous polarization field-enhanced ultraviolet light detector based on the BeZnOS quaternary alloy in this embodiment is prepared by the following method, including the following steps:

[0052] Step 1: Preparation of BeZnOS quaternary ceramic target by solid phase sintering method

[0053] 1.1...

Embodiment 2

[0062] A kind of spontaneous polarization field-enhanced ultraviolet light detector based on the BeZnOS quaternary alloy of this embodiment, the detector includes an m-plane sapphire substrate, an active layer, and a pair of parallel metal Al electrodes from bottom to top, wherein : The active layer is an m-plane BeZnOS quaternary alloy thin film, and the parallel metal electrodes are perpendicular to the c-axis direction of the BeZnOS quaternary alloy thin film. The thickness of the substrate is 0.43 mm, the thickness of the active layer is 90 nm, the thickness of the electrodes is 55 nm, and the distance between the parallel electrodes is 10 μm.

[0063] The above-mentioned spontaneous polarization field-enhanced ultraviolet light detector based on the BeZnOS quaternary alloy in this embodiment is prepared by the following method, including the following steps:

[0064] Step 1: Preparation of BeZnOS quaternary ceramic target by solid phase sintering method

[0065] 1.1 By m...

Embodiment 3

[0073] Embodiment 3 (comparative example)

[0074] A non-spontaneous polarization field-enhanced ultraviolet light detector based on a BeZnOS quaternary alloy in this embodiment, the detector includes an m-plane sapphire substrate, an active layer, and a pair of parallel metal Al electrodes from bottom to top, Wherein: the active layer is an m-plane BeZnOS quaternary alloy thin film, and the parallel metal electrodes are parallel to the c-axis direction of the BeZnOS quaternary alloy thin film. The thickness of the substrate is 0.43 mm, the thickness of the active layer is 90 nm, the thickness of the electrodes is 60 nm, and the distance between the parallel electrodes is 10 μm.

[0075] In this embodiment, the non-spontaneous polarization field-enhanced ultraviolet light detector based on the BeZnOS quaternary alloy mentioned above is prepared by the following method, including the following steps:

[0076] Step 1: Preparation of BeZnOS quaternary ceramic target by solid pha...

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Abstract

The invention discloses a spontaneous polarization field enhanced ultraviolet detector based on BeZnOS quaternary alloy and a preparation method thereof. The detector includes, in order from bottom totop, an m-plane sapphire substrate, an active layer and a pair of parallel metal electrodes, the active layer is an m-plane BeZnOS quaternary alloy film, and the parallel metal electrodes are perpendicular to the c-axis direction of the BeZnOS quaternary alloy film. An epitaxial m-plane BeZnOS film is grown on the single crystal m-plane sapphire, a metal electrode perpendicular to the c-axis of the film is evaporated, a spontaneous polarization electric field and an external electric field are fully utilized and stacked to enhance and promote the separation of a photon-generated carrier so asto enhance the light detection capacity. Besides, the ultraviolet light detector of the MSM structure is simple, the manufacturing process is simple, the detector has a good detection capacity for the ultraviolet light with the 300 nm wavelength, the response speed is fast, the dark current is small, and the performances are stable.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detectors, and in particular relates to an ultraviolet detector with an MSM structure. More specifically, the invention relates to a spontaneous polarization field-enhanced ultraviolet detector based on a BeZnOS quaternary alloy and its Preparation. Background technique [0002] BeZnOS quaternary alloy is a semiconductor material with wide band gap and high visible light transmittance, which can be used for light-emitting devices or photodetection devices in ultraviolet to solar blind areas. Since the BeZnOS quaternary alloy has the same hexagonal wurtzite structure as the ZnO crystal, its interior is alternately arranged by O(S) atomic planes and Zn(Be) atomic planes, and the Zn(Be)-O(S) bond is polar. A large number of neatly arranged Zn(Be)-O(S) bonds lead to a spontaneous polarization field in the c-axis direction of BeZnOS, which can effectively promote the separation and separation of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/108H01L31/0296H01L31/18
CPCH01L31/02963H01L31/1085H01L31/1836Y02P70/50
Inventor 何云斌王其乐卢寅梅张武忠黎明锴常钢李派陈俊年张清风
Owner HUBEI UNIV