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A method for growing rutile-phase titanium dioxide nanowire arrays with preferential orientation on the (001) crystal plane

A nanowire array, titanium dioxide technology, applied in nanotechnology, liquid chemical plating, metal material coating technology and other directions, can solve problems such as the inability to guarantee preferential orientation growth, achieve good ultraviolet stimulated light characteristics, and improve electron transfer rate. , good repeatability

Active Publication Date: 2021-07-09
工业和信息化部电子第五研究所华东分所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This invention realizes the growth of a one-dimensional titanium dioxide nanowire array, but it cannot guarantee the preferred orientation growth on the (001) crystal plane

Method used

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  • A method for growing rutile-phase titanium dioxide nanowire arrays with preferential orientation on the (001) crystal plane
  • A method for growing rutile-phase titanium dioxide nanowire arrays with preferential orientation on the (001) crystal plane
  • A method for growing rutile-phase titanium dioxide nanowire arrays with preferential orientation on the (001) crystal plane

Examples

Experimental program
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Embodiment 1

[0056] 1) With tetrabutyl titanate (Ti(OBu) 4 ) is the solute, the mixed solution of acetylacetone, ethylene glycol methyl ether and acetone is the solvent, the volume ratio of acetylacetone, ethylene glycol methyl ether and acetone is 1:1:0.5, and the concentration of preparing tetrabutyl titanate is 0.1 mol / L precursor solution;

[0057] 2) Dissolving 1% molar chromium chloride relative to the titanium ion concentration in the mixed solution of step 1) as Cr ion doping;

[0058] 3) Seal the solution doped with Cr ions, put it into a constant temperature water bath, and stir it magnetically at a constant temperature of 60°C to obtain a transparent and uniform sol;

[0059] 4) Deposit the sol obtained above on the cleaned FTO glass sheet by using the spin coating process at a speed of 2000r / min, and then put the spin-coated substrate into a drying oven at 200°C to bake the solvent. Fully volatilize, and finally put the substrate into an annealing furnace, and anneal at 450°C...

Embodiment 2

[0063] 1) With tetrabutyl titanate (Ti(OBu) 4 ) is the solute, the mixed solution of acetylacetone, ethylene glycol methyl ether and acetone is the solvent, the volume ratio of acetylacetone, ethylene glycol methyl ether and acetone is 1:1:0.5, and the concentration of preparing tetrabutyl titanate is 0.2 mol / L precursor solution;

[0064] 2) Dissolving 1% molar chromium chloride relative to the titanium ion concentration in the mixed solution of step 1) as Cr ion doping;

[0065] 3) Seal the solution doped with Cr ions, put it into a constant temperature water bath, and stir it magnetically at a constant temperature of 60°C to obtain a transparent and uniform sol;

[0066] 4) Deposit the sol obtained above on the cleaned FTO glass sheet by using the spin coating process at a speed of 2000r / min, and then put the spin-coated substrate into a drying oven at 250°C to bake the solvent. Fully volatilize, and finally put the substrate into an annealing furnace, and anneal at 450°C...

Embodiment 3

[0070] 1) Tetrabutyl titanate (Ti(OBu) 4 ) is the solute, the mixed solution of acetylacetone, ethylene glycol methyl ether and acetone is the solvent, the volume ratio of acetylacetone, ethylene glycol methyl ether and acetone is 1:1:0.5, and the concentration of preparing tetrabutyl titanate is 0.3 mol / L precursor solution;

[0071] 2) Dissolving 1% molar chromium chloride relative to the titanium ion concentration in the mixed solution of step 1) as Cr ion doping;

[0072] 3) Seal the solution doped with Cr ions, put it into a constant temperature water bath, and stir it magnetically at a constant temperature of 60°C to obtain a transparent and uniform sol;

[0073] 4) Deposit the sol obtained above on a cleaned FTO glass sheet by using the spin coating process at a speed of 2500r / min, and then put the spin-coated substrate into a drying oven at 250°C to bake the solvent. Fully volatilize, and finally put the substrate into an annealing furnace, and anneal at 450°C for 1 ...

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Abstract

The invention provides a method for growing a rutile phase titanium dioxide nanowire array in the preferred orientation of (001) crystal plane. The method comprises the following steps: 1) preparing a Cr-doped titanium dioxide thin film as a seed layer; 2) placing the Cr-doped titanium dioxide thin film seed layer prepared in step 1) in a growth solution, and growing by hydrothermal method to obtain the TiO nanowire arrays grown in preferred orientation in rutile phase. The method of the invention is low in cost, simple in process requirements, good in repeatability, and capable of large-scale manufacture, and the prepared titanium dioxide nanowire array has good preferential orientation growth and ultraviolet stimulated light characteristics in the (001) direction.

Description

technical field [0001] The present invention relates to the technical field of nanostructure arrays, and relates to a method for self-assembled growth of nanostructure arrays, in particular to a method for rutile-phase titanium dioxide nanowire arrays grown in the preferred orientation of (001) crystal planes, and in particular to a method for growing on Cr A method for growing rutile-phase titania nanowire arrays on a doped titania film with preferred orientation. Background technique [0002] Titanium dioxide is a typical wide bandgap direct bandgap n-type semiconductor with a bandgap above 3.0eV. At the same time, it is also a non-toxic, pollution-free and environmentally friendly material with abundant raw materials and low cost. It is used in medicine, chemistry, The fields of physics and nanomaterials have received extensive attention and research. In recent years, with the development of solar cells and flat-panel display industries, titanium oxide thin films have at...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12B82Y40/00
CPCB82Y40/00C23C18/1216C23C18/1225C23C18/1254
Inventor 汪洋杨永兴楼倩杨文静
Owner 工业和信息化部电子第五研究所华东分所
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