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A kind of aluminum nitride epitaxial layer growth method

A growth method and technology of aluminum nitride, which is applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of uneven surface, unstable growth of aluminum nitride film quality, and high dislocation density

Active Publication Date: 2021-02-05
宁波安芯美半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for growing an aluminum nitride epitaxial layer, which is used to solve the problems of unstable quality growth, high dislocation density, and surface uneven problem

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  • A kind of aluminum nitride epitaxial layer growth method
  • A kind of aluminum nitride epitaxial layer growth method
  • A kind of aluminum nitride epitaxial layer growth method

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Embodiment Construction

[0024] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

[0025] It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic ideas of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and number of componen...

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Abstract

The invention discloses a method for growing an aluminum nitride epitaxial layer, which comprises growing an aluminum nitride film on a substrate by physical vapor deposition, baking the aluminum nitride film, and nitriding the nitrided film on the substrate. An aluminum film, using a metal organic chemical vapor deposition method to grow an aluminum nitride epitaxial layer on the aluminum nitride film. The aluminum nitride thin film grown in the invention has low cost, no pollution and stability. The invention provides a method for growing an aluminum nitride epitaxial layer with high crystal quality, stable growth, low dislocation density and smooth surface.

Description

technical field [0001] The invention relates to the technical field of epitaxial layer growth, in particular to an aluminum nitride epitaxial layer growth method. Background technique [0002] Due to its high UV transparency and small lattice mismatch with AlGaN, aluminum nitride (AlN) is considered to be the most suitable substrate material for AlxGa1-xN based optoelectronic devices such as light emitting diodes (LEDs) and lasers (LDs). At present, commercial aluminum nitride single crystal substrates are expensive and difficult to obtain. The international mainstream route is to prepare high-quality aluminum nitride templates on sapphire substrates with high UV transparency. [0003] However, in the current method of preparing aluminum nitride templates on sapphire, the quality of the nucleation layer is greatly affected by the concentration of ambient water and oxygen, and the quality of aluminum nitride films from different furnaces is unstable, which is not conducive to...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/0242H01L21/0254H01L21/0262H01L21/02631H01L21/02664
Inventor 周陈唐军潘尧波
Owner 宁波安芯美半导体有限公司