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Detector and manufacturing method thereof

A manufacturing method and detector technology, applied in the field of detectors, can solve the problems of inability to detect the temperature of a TFT panel, a small number of temperature sensors, etc., and achieve the effects of reducing the difficulty of hardware design, realizing process compatibility, and flexible setting positions

Active Publication Date: 2019-04-16
SHANGHAI IRAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a detector and its manufacturing method, which is used to solve the problem of the existing X-ray flat panel detector due to the low number of temperature sensors when the temperature sensor is integrated in the readout circuit. , Only local problems can be accurately detected, so it is impossible to detect the temperature problem of the TFT panel

Method used

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  • Detector and manufacturing method thereof
  • Detector and manufacturing method thereof

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Embodiment 1

[0065] Such as figure 1 As shown, the present embodiment provides a method for manufacturing a detector, and the method includes:

[0066] A substrate 100 is provided, the substrate 100 includes a pixel area 101, and a temperature detection area 102 located on the periphery of the pixel area 101;

[0067] Manufacturing a plurality of pixel units 200 arranged in an array in the pixel area 101, and manufacturing at least one temperature detector 300 in the temperature detection area 102;

[0068] Wherein the pixel unit 200 is electrically connected to the driving pad 400 through the scanning line, and is electrically connected to the readout pad 500 through the data line; the temperature detector 300 is connected to the driving pad 400 and the readout pad through the temperature reading line. At least one of the pads 500 is electrically connected.

[0069] It should be noted that, in this embodiment, the scan line is fabricated simultaneously with the gate, the data line is fa...

Embodiment 2

[0094] Such as Figure 14 to Figure 16 As shown, the difference between this embodiment and Embodiment 1 is that the temperature detector 300 in this embodiment is a diode; According to the characteristics, the on-resistance of the diode is changed by the internal temperature of the TFT panel, so that the internal temperature of the TFT panel can be obtained by measuring the resistance value of the on-resistance of the diode. It should be noted that the position of the diode described in this embodiment can be set according to actual needs, and accurate temperature information at different positions can be obtained by changing the position of the diode; that is, the position of the diode described in this embodiment is adjustable, if it is formed in a local location (such as Figure 15 shown), what it acquires is local temperature information, if it is formed on the periphery of the entire pixel unit (such as Figure 14 shown), then what it acquires is the temperature inform...

Embodiment 3

[0115] Such as Figure 17 and Figure 18 As shown, the difference between this embodiment and Embodiment 1 and Embodiment 2 is that: the temperature detector 300 in this embodiment includes metal wires and diodes, wherein the metal wires are connected with several metal structures in the pixel unit 200 At least one of the diodes is produced simultaneously with the photodiode in the pixel unit 200; optionally, the metal wire and at least one of the gate, source, drain and common electrode in the pixel unit Manufactured at the same time; in this embodiment, the number of the metal wire and the number of the diode are both one, and the metal wire and the gate are manufactured at the same time.

[0116] The following takes the existing traditional amorphous silicon X-ray flat panel detector as an example, refer to Figure 17 and Figure 18 , the manufacturing method of the detector described in this embodiment will be described in detail.

[0117] Step 1: If Figure 18 As sho...

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Abstract

The invention provides a detector and a manufacturing method thereof. The manufacturing method comprises the steps that a substrate is provided, wherein the substrate comprises a pixel region and a temperature detection region located at the periphery of the pixel region; a plurality of pixel units which are arranged in an array mode are manufactured in the pixel region, at least one temperature detector is manufactured in the temperature detection region, wherein the pixel units are electrically connected with a driving bonding pad through a scanning line, and are electrically connected witha reading bonding pad through a data line; and the temperature detector is electrically connected with at least one of the driving bonding pad and the reading bonding pad through a temperature readingline. The manufacturing method solves the problem that the temperature of a TFT panel cannot be detected caused by the fact that in an existing X-ray flat panel detector, the number of the temperature sensors is small when temperature sensors are integrated in a reading circuit and only local area can be detected accurately.

Description

technical field [0001] The invention relates to the field of detectors, in particular to a detector and a manufacturing method thereof. Background technique [0002] With the development of society and the advancement of science and technology, X-ray flat panel detectors are widely used in various fields, such as medical imaging, industrial flaw detection, security inspection, etc.; especially in the field of medical imaging, X-ray flat panel detectors play an extremely important role. status. [0003] The X-ray flat panel detector is integrated with many pixel units, and each pixel unit includes a photodiode (PD: photodiode) and a thin film transistor (TFT). During the working process of the X-ray flat panel detector, the temperature has an impact on both PD and TFT: when the temperature is too high, it may cause image misalignment and damage to some functions, which directly affects the quality of the image, so it is necessary to monitor X-rays in real time The internal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/24G01K7/01
CPCG01K7/01G01T1/24
Inventor 朱翀煜金利波方志强岳欢
Owner SHANGHAI IRAY TECH
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