Epitaxial wafer of light-emitting diode and manufacturing method thereof, light-emitting diode
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as lattice mismatch and reduce the luminous efficiency of the light-emitting layer, and achieves reduction in defect density, lattice mismatch, and non-destructive effects. Effects of Radiant Recombination Centers
Active Publication Date: 2021-04-06
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0005] Due to the lattice mismatch of the production materials, new defects will be generated at the interface between the AlGaN layer and the n-type layer, and these defects will extend to the light-emitting layer to form non-radiative recombination centers and reduce the luminous efficiency of the light-emitting layer
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[0029]In order to make the objects, technical solutions, and advantages of the present invention, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
[0030]figure 1 It is a schematic structural view of an epitaxial sheet of a light emitting diode according to an embodiment of the present invention. Such asfigure 1 As shown, the epitaxial sheet includes a substrate 10 and an AlN buffer layer 20, a U-type GaN layer 30, a defect blocking layer 40, a n-type layer 50, a stress release layer 60, a light emitting layer 70, and P-type layer 80. Defect blocking layer 40 is inxAlyGA1-x-y N layer, where 0 <x <1, 0 <y <1, x + y <1.
[0031]The embodiment of the present invention is formed by forming a defect blocking layer between the U-type GaN layer and the n-type layer, the defect blocking layer is in.xAlyGA1-x-y N layer, due to the lattice constant of Ga, between the AlN lattice constant and the INN lattice constant, in...
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Abstract
The invention discloses an epitaxial wafer of a light-emitting diode, a manufacturing method thereof, and a light-emitting diode, belonging to the technical field of optoelectronic manufacturing. The epitaxial wafer includes a substrate and an AlN buffer layer, a u-type GaN layer, a defect blocking layer, an n-type layer, a stress release layer, a light-emitting layer, and a p-type layer formed sequentially on the substrate, and the defect blocking layer is In x al y Ga 1‑x‑y N layers. Since the lattice constant of GaN is between the lattice constant of AlN and the lattice constant of InN, In x al y Ga 1‑x‑y The lattice constant of N is also between the AlN lattice constant and the InN lattice constant, so the In x al y Ga 1‑x‑y The defect blocking layer made of N can reduce the lattice mismatch between the defect blocking layer and the n-type layer, and the defect density will also be reduced, thereby reducing the non-radiative recombination centers generated by defects in the light-emitting layer and improving the luminescence efficiency.
Description
Technical field[0001]The present invention relates to the field of optoelectronics manufacturing, and in particular, to an epitaxial sheet of a light emitting diode and a method of fabricating a light emitting diode.Background technique[0002]LED (Light Emitting Diode, LED) has the advantages of small volume, long life, low power consumption, and is currently widely used in automotive signal lights, traffic lights, display screens, and lighting.[0003]At present, the GAN-based LED epitaxial sheet typically includes a substrate and an AlN buffer layer, a U-type GaN layer, a defect blocking layer, an N-type layer, a stress release layer, a light-emitting layer, and a p-type layer. After the LED is powered, the carrier (including the electron and pockets of the n-type layer) migrate to the light-emitting layer and lifted in the light-emitting layer. The defect blocking layer is an AlGaN layer that can block the underlying defect outward.[0004]In the process of implementing the present in...
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IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/0066H01L33/0075H01L33/12
Inventor 张武斌王坤周盈盈曹阳乔楠吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD