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mosfet and power conversion circuit

A technology of power conversion circuit and gate electrode, which is applied in the direction of circuits, output power conversion devices, electrical components, etc., and can solve the problem of large switching characteristics

Active Publication Date: 2021-12-28
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, once the conventional MOSFET 800 is used in a power conversion circuit, there is a problem that the switching characteristics fluctuate greatly when the MOSFET is turned off (Turn off) when the charge balance around the gate fluctuates.

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0046] 1. Configuration and operation of the power conversion circuit 1 according to the first embodiment

[0047] The power conversion circuit 1 according to the first embodiment is a chopper circuit as a component such as a DC-DC converter or an inverter. The power conversion circuit 1 related to the first embodiment is as figure 1 As shown, it includes: a reactor 10 ; a power supply 20 ; a MOSFET 100 related to Embodiment 1; and a rectifying element 30 .

[0048] The reactor 10 is a passive element capable of storing energy in a magnetic field formed by passing an electric current.

[0049] The power source 20 is a DC power source that supplies current to the reactor 10 . MOSFET 100 controls the current supplied to reactor 10 by power supply 20 . Specifically, the MOSFET 100 performs switch switching in response to a clock signal applied to the gate electrode of the MOSFET 100 by a driving circuit (not shown), and once it is in a conductive state, conduction between the...

Embodiment approach 2

[0108] MOSFET 102 according to Embodiment 2 basically has the same configuration as MOSFET 100 according to Embodiment 1, but differs from MOSFET 100 according to Embodiment 1 in that the n-type columnar region in the region adjacent to the trench The dopant concentration is lower than that of the n-type columnar region at the lowermost portion of the n-type columnar region. That is, in the semiconductor substrate 110 of the MOSFET 102 related to the second embodiment, as Figure 7 As shown, the n-type columnar region 114 has a region with a lower dopant concentration than the lowermost portion of the n-type columnar region 114 on the region adjacent to the trench 122 (n - type semiconductor region 138).

[0109] In Embodiment 2, it is also possible that only the region adjacent to the trench 122 in the n-type columnar region 114 has a dopant concentration higher than that at the lowermost part of the n-type columnar region 114 The lower region, or: the region other than the...

Embodiment approach 3

[0114] The power conversion circuit 2 of the third embodiment basically has the same configuration as the power conversion circuit 1 of the first embodiment, but differs from the power conversion circuit 1 of the first embodiment in that it is a full bridge circuit. That is, in the power conversion circuit 2 related to the third embodiment, as Figure 8 As shown, four MOSFETs 100 ( 100 a to 100 d ) are provided as MOSFETs, and built-in diodes of each MOSFET are provided as rectification elements.

[0115] Although the power conversion circuit 2 of the third embodiment is different from the power conversion circuit 1 of the first embodiment in that it is a full-bridge circuit, it is the same as the power conversion circuit 1 of the first embodiment because the MOSFET 100 (100a ~100d) has: a carrier compensation electrode 128 located between the gate electrode 126 and the bottom of the trench 122 and electrically connected to the source electrode 134; and a carrier compensation ...

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Abstract

The MOSFET 100 of the present invention is characterized in that it includes: a semiconductor base 110 with an n-type columnar region 114, a p-type columnar region 116, a base region 118, and a source region 120, and consists of the n-type columnar region 114 and the p-type columnar region 114. Type columnar region 116 constitutes a super junction structure; trench 122 has side walls and a bottom; gate electrode 126 is formed in trench 122 via gate insulating film 124; carrier compensation electrode 128 is located between gate electrode 126 and trench between the bottoms of the grooves 122; the insulating region 130, which separates the carrier compensation electrode 128 from the sidewall and the bottom; and the source electrode 132, which is electrically connected to the carrier compensation electrode 128 while being electrically connected to the source region 120 . According to the MOSFET 100 of the present invention, even if the charge balance around the gate fluctuates, it is possible to reduce the fluctuation of the switching characteristics after the MOSFET is turned off to a smaller level than before.

Description

technical field [0001] The present invention relates to MOSFETs and power conversion circuits. Background technique [0002] Conventionally, a MOSFET having a semiconductor base having a superjunction structure composed of n-type column regions and p-type column regions has been widely known (for example, refer to Patent Document 1). [0003] Previous MOSFET800 such as Figure 10 As shown, it includes: a semiconductor base 810, an n-type columnar region 814 and a p-type columnar region 816, a p-type base region 818 formed on the surface of the n-type columnar region 814 and the p-type columnar region 816, and The n-type source region 820 formed on the surface of the p-type base region 818, and the super junction structure is formed by the n-type columnar region 814 and the p-type columnar region 816; In the region where the columnar region 814 is located, it is formed to a position deeper than the deepest part of the base region 818, and is formed so that a part of the sour...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/40H01L29/06H01L29/08
CPCH01L29/407H01L29/7805H01L29/7813H01L29/0634H01L29/0878H01L29/1608H02M3/156H01L29/1095H01L29/868H01L29/872H02M7/5387
Inventor 新井大辅北田瑞枝
Owner SHINDENGEN ELECTRIC MFG CO LTD