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Integrated semiconductor module power component and fabrication method thereof

A technology of module power and power components, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of not meeting the requirements of component volume and thermal performance, large power components, low power density, etc. problem, to achieve the effects of poor heat dissipation conditions, compact structure, and improved power density

Active Publication Date: 2019-05-14
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the purpose of the present invention is to provide an integrated semiconductor module power assembly and its manufacturing method to solve the problem that the existing power assembly has large volume, low power density, and large thermal resistance, which cannot meet the requirements of the application field for the volume and thermal performance of the assembly. technical issues

Method used

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  • Integrated semiconductor module power component and fabrication method thereof
  • Integrated semiconductor module power component and fabrication method thereof
  • Integrated semiconductor module power component and fabrication method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0066] as attached Figure 10 As shown, a specific embodiment of an integrated semiconductor module power assembly, the power assembly 100 includes:

[0067] A power module 300, in which a power element 400 is packaged;

[0068] A heat sink 203 installed on the upper surface of the power module 300;

[0069] The radiator 2 204 installed on the lower surface of the power module 300;

[0070] Shell 101 installed on the upper surface of radiator 1 203;

[0071] The shell two 102 installed on the lower surface of the radiator one 203 .

[0072] as attached figure 1 As shown, it is a schematic circuit diagram of the application of the integrated semiconductor module power assembly in this embodiment. A power assembly 100 includes three sets of power elements 400 in circuit composition, and correspondingly, the power assembly 100 includes three sets of power modules 300 in structure. as attached figure 2 As shown, it is a schematic circuit diagram of a single group of power e...

Embodiment 2

[0094] A specific embodiment of the method for manufacturing an integrated semiconductor module power assembly as described in Embodiment 1, comprising the following steps:

[0095] S100) Encapsulate the power element 400 inside the power module 300, as attached image 3 Shown is a fully packaged power module 300;

[0096] S101) as attached Image 6 and attached Figure 7 As shown, the power module 300 is press-fitted between the first radiator 203 and the second radiator 204 to form a double-sided cooling power module 200, as shown in the attached Figure 8 and attached Figure 9 Shown is the press-fitted double-sided cooling power module 200;

[0097] S102) as attached Figure 10 As shown, the double-sided cooling power module 200 is installed between the first casing 101 and the second casing 102 to form a power assembly 100, as shown in the attached Figure 11 , 12 Shown with 13 is the power assembly 100 that completes installation;

[0098] S103 ) Pouring insulati...

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Abstract

The invention discloses an integrated semiconductor module power component and a fabrication method thereof. The power component comprises a power module with a power element packaged therein, a firstheat radiator arranged on the upper surface of the power module, a second heat radiator arranged on the lower surface of the power module, a first housing arranged on the upper surface of the first heat radiator, and a second housing arranged on the lower surface of the first heat radiator; the first heat radiator and the second heat radiator are connected with the power module in a pressing manner; the first heat radiator and the power module are connected and in contact through a first heat conductive gasket; and the power module and the second heat radiator are connected and in contact through a second heat conductive gasket. According to the integrated semiconductor module power component and the fabrication method thereof, technical problems of large size, low power density, high heat resistance, and failure of satisfaction of the requirement of the size and the heat performance of the component by an application field of the power component can be solved.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a power assembly of a highly integrated semiconductor module and a manufacturing method thereof. Background technique [0002] The traditional IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) power module is a module with a single-sided heat dissipation structure. When the power module is installed, it needs to be assembled with an independent single-sided heat sink through a thermal interface material. This installation structure has disadvantages such as large thermal resistance, large volume, low power density, large parasitic parameters, and high cost, and is not suitable for applications that require small size, compact structure, and higher reliability requirements. [0003] With the widening application range of power electronic products, especially the rise of emerging markets such as high-speed railways and electric vehicles, the stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/473H01L21/48
Inventor 李云赵振龙余军马雅青朱世武焦明亮吴春冬
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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