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Boron nitride-graphene oxide hybrid material with three-dimensional structure, preparation method of boron nitride-graphene oxide hybrid material and application as filler in heat conducting composite

A heat-conducting composite material and three-dimensional structure technology, applied in chemical instruments and methods, heat exchange materials, etc., can solve problems such as difficulty in meeting the needs of the development of the electronics industry and low thermal conductivity

Active Publication Date: 2019-05-17
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To sum up, the thermal conductivity of traditional thermally conductive and insulating composite materials is low, which is difficult to meet the needs of the development of the electronics industry.

Method used

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  • Boron nitride-graphene oxide hybrid material with three-dimensional structure, preparation method of boron nitride-graphene oxide hybrid material and application as filler in heat conducting composite
  • Boron nitride-graphene oxide hybrid material with three-dimensional structure, preparation method of boron nitride-graphene oxide hybrid material and application as filler in heat conducting composite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] (1) Preparation of three-dimensional boron nitride-graphene oxide hybrid materials:

[0072] Boron nitride sheets with a diameter of 10 μm and a thickness of 700 nm, graphene oxide with a diameter of 2 μm, and water were mixed at a mass ratio of 40:1:100, and ball milled at a speed of 300 rpm for 24 hours.

[0073] The boron nitride-graphite oxide mixture was frozen at -50°C for 36h. And the freeze-dried mixture was subjected to freeze-drying treatment, the vacuum degree of the freeze-drying treatment was -100Pa, the freezing temperature of the freeze-drying treatment was -50°C, and the time of the freeze-drying treatment was 48h; the density of the obtained hybrid material was 250mg / cm 3 .

[0074] (2) Preparation of thermally conductive composite materials with three-dimensional boron nitride-graphene oxide hybrid materials as fillers:

[0075] Based on the total volume of the thermally conductive composite material as 100%, 4,4'-biphenol-bis[4-(2-glycidyloxy)benz...

Embodiment 2

[0080] (1) Preparation of three-dimensional boron nitride-graphene oxide hybrid materials:

[0081] Boron nitride sheets with a diameter of 5 μm and a thickness of 500 nm, graphene oxide with a diameter of 500 nm, and water were mixed at a mass ratio of 23:1:170, and ball milled at a ball milling speed of 500 rpm and a ball milling time of 48 hours.

[0082] The boron nitride-graphite oxide mixture was frozen at -20°C for 24h. The frozen mixture was subjected to freeze-drying treatment, the vacuum degree of the freeze-drying treatment was -20Pa, the freezing temperature of the freeze-drying treatment was 0° C., and the time of the freeze-drying treatment was 36 hours. The resulting hybrid material has a density of 120 mg / cm 3 .

[0083] (2) Preparation of thermally conductive composite materials with three-dimensional boron nitride-graphene oxide hybrid materials as fillers:

[0084] Based on the total volume of the heat-conducting composite material as 100%, bisphenol A di...

Embodiment 3

[0087] (1) Preparation of three-dimensional boron nitride-graphene oxide hybrid materials:

[0088] Boron nitride sheets with a diameter of 10 μm and a thickness of 600 nm, graphene oxide with a diameter of 800 nm, and water were mixed at a mass ratio of 66:1:100, and ball milled at a speed of 300 rpm for 24 hours.

[0089] The boron nitride-graphite oxide mixture was frozen at -50°C for 36h. And the freeze-drying treatment was carried out on the frozen mixed liquid, the vacuum degree of the freeze-drying treatment was -100 Pa, the freezing temperature of the freeze-drying treatment was -50° C., and the time of the freeze-drying treatment was 48 hours. The resulting hybrid material has a density of 180 mg / cm 3 .

[0090] (2) Preparation of thermally conductive composite materials with three-dimensional boron nitride-graphene oxide hybrid materials as fillers:

[0091] Based on the total volume of the thermally conductive composite material as 100%, 4,4'-biphenol-bis[4-(2-gl...

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Abstract

The invention discloses a boron nitride-graphene oxide hybrid material with a three-dimensional structure, a preparation method of the boron nitride-graphene oxide hybrid material and an application as filler in a heat conducting composite. The boron nitride-graphene oxide hybrid material with the three-dimensional structure has a three-dimensional grid structure and is composed of boron nitride and graphene oxide, and the graphene oxide is uniformly distributed on boron nitride sheets. The invention also provides the heat conducting composite which has excellent performance and contains the boron nitride-graphene oxide hybrid material with the three-dimensional structure as the filler. The heat conducting composite is composed of the boron nitride-graphene oxide hybrid material with the three-dimensional structure as the filler and an epoxy resin mixture as a matrix, and has high heat conductivity coefficient and good electrical insulation performance, the heat conductivity coefficient is 0.7W / (m.K)-5.1W / (m.K), and volume resistivity is 2.0*10<12> omega.cm-4.0*10<14> omega.cm.

Description

technical field [0001] The invention belongs to the technical field of preparation of heat-conducting composite materials, and relates to a three-dimensional structure boron nitride-graphene oxide hybrid material, its preparation method and its use as a filler in heat-conducting composite materials, in particular to a three-dimensional structure boron nitride-graphene oxide hybrid material. Graphene hybrid material, a preparation method thereof, a thermally conductive composite material containing the hybrid material as a filler, and a preparation method of the thermally conductive composite material. Background technique [0002] With the rapid development of electronic technology, the power and integration of electronic devices are increasing day by day. Since 1959, the feature size of the device has been continuously reduced, and has developed from the micron level to the nanometer level, while the integration level is increasing at a high speed of 40% to 50% every year. ...

Claims

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Application Information

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IPC IPC(8): C08K7/00C08K3/38C08K3/04C08L63/00C09K5/14
Inventor 孙蓉么依民孙娜曾小亮鲁济豹任琳琳许建斌汪正平
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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