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Photomask

A photomask and mask technology, applied in optics, originals for photomechanical processing, instruments, etc.

Inactive Publication Date: 2019-05-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these developments have increased the complexity of the processing and fabrication of integrated circuits, and to achieve these advances, similar developments in the processing and fabrication of integrated circuits are required

Method used

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Embodiment Construction

[0049] The following content provides many different embodiments or examples for implementing different components of the embodiments of the present invention. Specific examples of components and configurations are described below to simplify the embodiments of the present invention. Of course, these are only examples and are not intended to limit the embodiments of the present invention. For example, if the description mentions that the first component is formed on or on the second component, it may include an embodiment where the first and second components are in direct contact, or it may include additional components formed on the first and second components. In between, an embodiment in which the first and second components are not in direct contact. In addition, the embodiment of the present invention may repeat component symbols and / or letters in many examples. These repetitions are for the purpose of simplification and clarity, and do not in themselves represent a spe...

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Abstract

A photomask and a method for manufacturing the same are provided. The photomask includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.

Description

Technical field [0001] The embodiment of the present invention relates to a photomask and a manufacturing method thereof, and particularly relates to a photomask and a manufacturing method thereof including using a photolithography process (lithography process). Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. The technological development of materials and design of integrated circuits (ICs) has created multiple generations of integrated circuits (ICs), and each generation has smaller and more complex circuits than the previous generation. However, these developments have increased the complexity of the processing and manufacturing of integrated circuits. In order to realize these advances, similar developments in the processing and manufacturing of integrated circuits are required. In the course of the evolution of integrated circuits, the functional density (that is, the number of interconnected devices per chip are...

Claims

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Application Information

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IPC IPC(8): G03F1/52G03F1/58
CPCG03F1/22G03F1/24G03F1/58G03F1/52H01L21/0274G03F1/48
Inventor 薛文章李环陵陈嘉仁李信昌
Owner TAIWAN SEMICON MFG CO LTD
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