Thin film structure for boron-enriched coating of boron-coated neutron detector
A neutron detector and thin film structure technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of high cost and high requirements, achieve low stress, improve adhesion effect, and enhance adhesion effect of effect
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Embodiment 1
[0027] A thin-film structure for boron-rich coatings on boron-coated neutron detectors, such as figure 1 shown, including substrates 1 and B 4 C Film 2, Substrate 1 and B 4 A metal layer 3 with a certain thickness is arranged between the C films 2 . The aluminum material model of base 1 is AA1060; B 4 The thickness of the C film is 1.2 μm; the material of the metal layer 3 is an active metal, and the Gibbs free energy of the active metal of the active metal does not exceed the Gibbs free energy of the Al metal. , able to get from Al 2 o 3 In order to obtain more O elements, the material of the metal layer 3 in this embodiment is a MgAl alloy with a thickness of 15 nm.
[0028] Metal layers 3 and B 4 The C thin film 2 is prepared by magnetron sputtering. In this embodiment, the preparation of metal layers 3 and B 4 The sputtering gas for C film 2 is pure Ar gas, and the B 4 The sputtering pressure of C film 2 is 10mTorr, and loose B 4 C film 2, reduce B 4 The stress ...
Embodiment 2
[0031] A thin-film structure for boron-rich coatings on boron-coated neutron detectors, such as figure 1 shown, including substrates 1 and B 4 C Film 2, Substrate 1 and B 4 A metal layer 3 with a certain thickness is arranged between the C films 2 . The aluminum material model of the base 1 is AA1060. B 4 The thickness of the C film was 1 μm. The material of the metal layer 3 is an active metal, and the Gibbs free energy of the active metal of the active metal does not exceed the Gibbs free energy of the Al metal. 2 o 3 In order to obtain more O elements, the material of the metal layer 3 in this embodiment is a MgAl alloy with a thickness of 100 nm.
[0032] Metal layers 3 and B 4 The C thin film 2 is prepared by magnetron sputtering. In this embodiment, the preparation of metal layers 3 and B 4 The sputtering gas for C film 2 is pure Ar gas, and the B4 The sputtering pressure of C film 2 is 12mTorr, and loose B 4 C film 2, reduce B 4 The internal stress of the C f...
Embodiment 3
[0034] A thin-film structure for boron-rich coatings on boron-coated neutron detectors, such as figure 1 shown, including substrates 1 and B 4 C Film 2, Substrate 1 and B 4 A metal layer 3 with a certain thickness is arranged between the C films 2 . The aluminum material model of the base 1 is AA1060. B 4 The thickness of the C film was 2 μm. The material of the metal layer 3 is an active metal, and the Gibbs free energy of the active metal of the active metal does not exceed the Gibbs free energy of the Al metal. 2 o 3 In order to obtain more O elements, the material of the metal layer 3 in this embodiment is MgAl alloy, and its thickness is 50 nm.
[0035] Metal layers 3 and B 4 The C thin film 2 is prepared by magnetron sputtering. In this embodiment, the preparation of metal layers 3 and B 4 The sputtering gas for C film 2 is pure Ar gas, and the B 4 The sputtering pressure of C film 2 is 11mTorr, and loose B 4 C film 2, reduce B 4 The internal stress of the C ...
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