Terahertz detector based on aperiodic grating drain metal gate mosfet

Abstract

The invention discloses a terahertz detector based on aperiodic grating drain metal gate MOSFET, including metal gate MOSFET with aperiodic grating drain and its various patterns, low noise preamplifier and voltage feedback Loop; the gate of the metal gate MOSFET is connected to the No. 1 bias voltage source through the No. 1 bias resistor, the drain receives the terahertz signal, and the No. 1 blocking capacitor is connected between the source and the forward input of the low-noise preamplifier; low The positive input end of the noise preamplifier is connected to the No. 2 bias voltage source through the No. 2 bias resistor; the voltage feedback loop includes a feedback resistor, a grounding resistor, a No. 2 DC blocking capacitor and a No. 3 DC blocking capacitor. The invention realizes the adjustment of the THz response band range by adjusting the grating structure parameters of the drain (width, length, area area and pattern form of the grating), thereby improving the detection sensitivity of the detector and realizing narrow-band (even point frequency) terahertz probe.

Description

technical field [0001] The present invention relates to the technical field of terahertz detectors, in particular to a terahertz detector based on non-periodic grating drain metal gate MOSFET. Background technique [0002] Terahertz wave is an electromagnetic wave between microwave and infrared light on the electromagnetic spectrum, its frequency is about 0.1-10THz, and its wavelength corresponds to 3mm-30μm. Terahertz technology is one of the frontier and hot areas of information science and technology research. In recent years, it has received extensive attention from research institutions around the world. Developed countries such as the United States, Japan, and Europe have successively rated terahertz technology as "Ten Technologies That Will Change the Future World" and "Top Ten Key Strategic Objectives of National Pillar Technologies", and have invested huge sums of money to consolidate their international status in the field of terahertz. Terahertz has broad applica...

AI Technical Summary

Problems solved by technology

At present, the existing detectors based on CMOS compatible technology generally have many shortcomings such as slow response speed, low sensitivity, high price, and usually need to work at low temperature, which largely limits the integrated application and development of terahertz technology.

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