Double H-shaped compression beam silicon micro-resonant pressure sensor chip and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- XI AN JIAOTONG UNIV
- Publication Date
- 2019-06-14
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of micro-nano electronic sensors, and in particular relates to a silicon micro-resonant pressure sensor chip with double H-shaped pressure beams and a preparation method thereof. Background technique
[0002] The silicon resonant pressure sensor is the pressure sensor with the highest precision at present. It measures the pressure indirectly by detecting the natural frequency of the resonant structure, and it is a quasi-digital output. Its accuracy is mainly affected by the mechanical characteristics of the structure, so it has strong anti-interference ability and stable performance. In addition, silicon resonant pressure sensors also have the advantages of wide frequency band, compact structure, low power consumption, small size, light weight, and mass production, etc., and have always been the focus of research in various countries. Silicon microresonant pressure sensors can be used in airborne air data t...