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Avalanche tolerance test device of power MOSFET device

A technology of avalanche tolerance and testing equipment, which is applied in the direction of single semiconductor device testing, etc., can solve the problems of bulky measuring equipment and high cost, and achieve the effects of cost reduction, low equipment cost and simple testing scheme

Inactive Publication Date: 2019-06-14
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the existing measuring devices can only measure the avalanche withstand value of power MOSFET devices, and it is necessary to connect the corresponding oscilloscope to observe the voltage and current during the test process, and there are problems of large size and high cost of measuring devices

Method used

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  • Avalanche tolerance test device of power MOSFET device
  • Avalanche tolerance test device of power MOSFET device
  • Avalanche tolerance test device of power MOSFET device

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Embodiment Construction

[0026] In order to describe the present invention more specifically, the technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] Such as figure 1 As shown, the test device for avalanche tolerance of power MOSFET devices in the present invention includes a front-end avalanche test circuit, a back-end avalanche voltage and current sampling circuit and a control module.

[0028]The structure of the front-end avalanche test circuit 101 includes an adjustable DC power supply V, a fuse, an adjustable inductance L1, a power MOSFET device to be tested and a current sampling resistor R I ; The positive pole of the adjustable DC power supply V is connected to the fuse; the other end of the fuse is connected to the inductor L1; the other end of the inductor L1 is connected to the drain of the MOSFET device to be tested; the source of the MOSFET device to be tested is connected to the c...

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Abstract

The invention discloses an avalanche tolerance test device of a power MOSFET device. The avalanche tolerance test device of the power MOSFET device comprises a front end power MOSFET device to be tested and a peripheral test circuit thereof, and a back end sampling control system; the test circuit comprises an adjustable direct current power supply, a fuse, an adjustable inductor, a voltage sampling resistor, a voltage dividing resistor and a current sampling resistor; and the sampling control system comprises an operational amplifier module, an AD module, a CPU module, a driving module, and an upper computer. The avalanche tolerance test device of the power MOSFET device disclosed by the invention has safe operation, simple equipment, low cost and objective test result, and can display the drain-source voltage of the MOSFET power device to be tested and the waveform of the current flowing through the drain-source in the upper computer; meanwhile, the avalanche tolerance test device ofthe power MOSFET device realizes a high instantaneous energy avalanche tolerance test, and provides important parameter indexes for device performance evaluation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor testing, and in particular relates to a testing device for avalanche tolerance of power MOSFET devices. Background technique [0002] Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transitor, metal-oxide-semiconductor long-effect transistor) device plays an important role in high-frequency power conversion due to its advantages of high frequency, low drive power, strong anti-interference energy, and high cost performance. . Power MOSFET devices are increasingly being used in the automotive field. They drive inductive loads such as motors and alternators. These MOSFETs need to withstand the energy spikes of Unclamped Inductive Switching (UIS). The switching process under unclamped inductive load is generally considered to be the most extreme stress situation that power MOSFET devices can suffer in system applications, because the energy stored in the inductance when the loop is turned ...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 徐晓筱胡兴懿程泽乾吴建德何湘宁
Owner ZHEJIANG UNIV
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