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Broad-spectrum multi-band detection structure with enhanced selective absorption and its preparation method

A wide-spectrum, selective technology for photodetection

Active Publication Date: 2021-01-05
XIAN TECH UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to provide a selective absorption enhanced wide-spectrum multi-band detection structure and its preparation method to solve the problem that the detector structure in the prior art cannot simultaneously realize visible light-near-infrared multi-band absorption enhanced detection

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  • Broad-spectrum multi-band detection structure with enhanced selective absorption and its preparation method
  • Broad-spectrum multi-band detection structure with enhanced selective absorption and its preparation method
  • Broad-spectrum multi-band detection structure with enhanced selective absorption and its preparation method

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Embodiment Construction

[0024] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] The basic principles and ideas of this application are:

[0026] The base of the wide-spectrum detection structure is an array of three-dimensional square well microstructures, and there are resonant cavities in the square well microstructures and between the square well microstructures. A microlens array is arranged above the subpixel unit composed of the square well microstructure array and the lower electrode 2 on its surface, the photosensitive layer 3 and the upper electrode 4, and each microlens is opposite to the subpixel unit below, and the microlens will incident The light waves converge, pass through the filter, and enter the wide-spectrum detection structure. Most of the light waves hit the resonant cavity, and a small part hit the non-resonant place. The incident light wave passes through the upper electrode 4 which is con...

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Abstract

The invention relates to a selective absorption-enhanced broadband multi-band detection structure and a preparation method thereof. The selective absorption-enhanced broadband multi-band detection structure includes several sub-pixel units capable of detecting incident light of different bands, and each sub-pixel Each unit is composed of a square well-shaped microstructure array and its surface metal lower electrode, photosensitive layer and upper electrode. The square well-shaped microstructure size and array spacing in different sub-pixel units are determined according to the detection band of the sub-pixel unit. It is determined that the upper opening of the square well-shaped microstructure is hollow inside to form a resonant cavity, and the adjacent square well-shaped microstructures in the same sub-pixel unit form a resonant cavity. The invention solves the problem that the detector structure in the prior art cannot realize visible light-near-infrared multi-band absorption enhanced detection at the same time.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a selective absorption enhanced wide-spectrum multi-band detection structure and a preparation method thereof. Background technique [0002] Photodetectors are detected by changes in the conductivity of the irradiated material caused by radiation. Photodetectors have a wide range of uses. They are mainly used in imaging and detection, industrial automatic control, photometry, etc. in the visible or near-infrared band; in the infrared band, they are mainly used in infrared thermal imaging, infrared remote sensing, etc. The common ones are single-band visible light imaging or single-band infrared imaging devices, which have narrow band coverage and low integration. In the application of wide-spectrum detection, they are large in size, heavy in weight, high in power consumption, and not high enough for the utilization of incident light waves. Because of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14621H01L27/1463H01L27/14601H01L27/1461H01L27/14629
Inventor 刘欢刘卫国安妍白民宇韩军王卓曼胡加兴蔡长龙
Owner XIAN TECH UNIV
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