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A combined crucible for improving the stability of evaporation beam by using saturated vapor pressure and a source furnace with the crucible

A technology of stability and vapor pressure, applied in vacuum evaporation plating, metal material coating process, coating, etc., can solve problems such as beam instability, reduce the influence of beam stability, and improve beam current Stability, the effect of stabilizing the beam current control

Active Publication Date: 2020-08-04
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the problem that the surface morphology of the evaporation source material can easily lead to unstable beams in the thin film preparation technology, and to provide a combined crucible that uses saturated vapor pressure to improve the stability of the evaporation beam and a source with the crucible. furnace;

Method used

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  • A combined crucible for improving the stability of evaporation beam by using saturated vapor pressure and a source furnace with the crucible
  • A combined crucible for improving the stability of evaporation beam by using saturated vapor pressure and a source furnace with the crucible
  • A combined crucible for improving the stability of evaporation beam by using saturated vapor pressure and a source furnace with the crucible

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Embodiment 1

[0042] Such as figure 1 with figure 2As shown, a combined crucible of the present invention that uses saturated vapor pressure to improve the stability of the evaporation beam, the crucible 100 is sequentially provided with a crucible upper part 110 and a crucible lower part 120 from top to bottom; the crucible upper part 110 is connected by a support platform 130 The lower part of the crucible 120, the support platform 130 is provided with a movable current limiting assembly 200, the position where the movable current limiting assembly 200 contacts with the support platform 130 is provided with a bayonet, and the movable current limiting assembly 200 is provided with a limiting flow hole 210, the current limiting The hole 210 is perpendicular to the surface of the movable current limiting component 200, and the exit angle of the beam can be adjusted by adjusting the direction of the bayonet. The present invention improves the stability of the beam based on the theory of red...

Embodiment 2

[0050] Such as Figure 5 As shown, a source furnace for improving the stability of the evaporation beam in this embodiment includes a crucible 100, an evaporation source 300, and a heating unit 400. A unit 400, the heating unit 400 is used to heat the crucible 100, the heating unit 400 is a resistance wire, and the crucible 100 is the crucible 100 described in Embodiment 1. The opening direction of the crucible 100 is provided with a beam baffle 500 (such as image 3 shown). The present invention accurately controls the layer-by-layer growth of the thin film by alternately opening and closing the beam baffle 500 at the top of the crucible 100, and the change of the surface morphology of the evaporation source material will affect the stability of the beam, thereby affecting the quality and quality of the thin film and its devices. electrical properties. The present invention improves the crucible 100 in MBE technology and uses a new technical solution to obtain more stable ...

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Abstract

The invention discloses a combined crucible capable of improving the stability of an evaporation beam by utilizing saturated vapor pressure and a source oven equipped with the crucible, and belongs tothe technical field of thin film growth. The combined crucible comprises a crucible upper part and a crucible lower part, wherein the crucible upper part is connected with the crucible lower part through a supporting table; a movable flow limiting assembly is arranged on the supporting table and designed to be a detachable device; and flow limiting holes are formed in the movable flow limiting assembly. According to the combined crucible, the flow limiting assembly is placed on the supporting table, so that the saturated vapor pressure can be reached in a crucible charging area; the evaporation rate can be controlled to completely depend on the crucible temperature which can be stably controlled; the influence of changes in the surface appearance of an evaporation source material during the growth process on the evaporation beam can be avoided; and the beam stability can be greatly improved for the preparation of a higher-quality thin film.

Description

technical field [0001] The invention relates to the technical field of thin film growth, and more specifically relates to a combined crucible which utilizes saturated vapor pressure to improve the stability of evaporation beams and a source furnace with the crucible. Background technique [0002] Environment, energy, life and new materials are the four major issues facing human beings. Among them, the research on new materials requires the ability to manipulate atoms, and thin film technology is the key entry point for manipulating atoms. The representative method of thin-film technology is molecular beam epitaxy thin-film growth, which generates thin-films by injecting atomic or molecular beams generated by evaporation of heat sources onto heated and clean substrates. The development of this technology is to meet the increasingly higher requirements of the electronic device process, that is, to realize the thinner layer planar structure that can precisely control the doping...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24
Inventor 聂越峰赵蕴琦臧一鹏
Owner NANJING UNIV