An integrated circuit dynamic storage capacitor leakage time curve measuring device

Abstract

The invention discloses an integrated circuit dynamic storage capacitor leakage time curve measuring device comprising a core control module, a level conversion circuit, a signal buffer conditioning circuit, an analog-to-digital converter and a power supply module. The core control module writes data into a dynamic storage capacitor through the level conversion circuit, reads an output voltage value of the dynamic storage capacitor conditioned by the signal buffer conditioning circuit through the analog-to-digital converter, and finally displays a voltage time curve of the dynamic storage capacitor on the display screen. The method solves the problem of board-level measurement of the dynamic storage capacitor leakage time curve of the integrated circuit, has the characteristics of low cost, small size, wide applicable voltage range, high expandability, automatic measurement, convenience in use and the like, and can be applied to the field of dynamic storage capacitor leakage time curvetest of the integrated circuit (IC) test.

Description

technical field [0001] The invention relates to the field of integrated circuit testing, in particular to a device for measuring leakage time curves of integrated circuit dynamic storage capacitors. Background technique [0002] In the integrated circuit industry, dynamic storage structures are widely used. For example, dynamic random access memory (DRAM) occupies a large memory market due to its advantages of fast read and write speed, small area and low price. In addition, dynamic storage structures are also used in some display devices. The structure stores display data. Different from the bistable circuit used by SRAM, the dynamic storage structure uses storage capacitors to store data. Due to various leakage currents in the CMOS process circuit, the voltage of the storage capacitor will decay with time, so the dynamic storage structure requires additional refresh operation to maintain the stored data on the storage capacitor. [0003] However, different parameters of ...

AI Technical Summary

Problems solved by technology

However, since the capacitance of the storage capacitor in the integrated circuit is on the order of femtofarads (fF), which is much smaller than the capacitance at the circuit board level, if you directly use an oscilloscope on the market to test the dynamic capacitance leakage time curve, the probe of the oscilloscope increases the storage capacity. Capacitor leakage circuit, the charge of the storage capacitor will be released soon, so the traditional circuit board level test scheme cannot realize the measurement of the leakage time curve of the dynamic storage capacitor of the integrated circuit

Images