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Equivalent circuit of CMOS SPAD photoelectric device

A technology of optoelectronic devices and equivalent circuits, applied in the field of single photon detection

Active Publication Date: 2019-06-18
CHONGQING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the research work on the equivalent circuit model of CMOS SPAD devices is still in its infancy.

Method used

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  • Equivalent circuit of CMOS SPAD photoelectric device
  • Equivalent circuit of CMOS SPAD photoelectric device
  • Equivalent circuit of CMOS SPAD photoelectric device

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Embodiment Construction

[0018] The technical solutions in the embodiments of the present invention will be described clearly and in detail below with reference to the drawings in the embodiments of the present invention. The described embodiments are only some of the embodiments of the invention.

[0019] The technical scheme that the present invention solves the problems of the technologies described above is:

[0020] Such as figure 1 Shown is a block diagram of a CMOS SPAD optoelectronic device. It can be seen from the figure that in this structure, the PN junction is composed of a heavily doped P-type region and a lightly doped N well. The avalanche region (corresponding to region 11 in the figure) is located at the PN junction. The N well below the avalanche region is the main The light absorption area (corresponding to the 12 area in the figure). There is lateral diffusion between the three N wells, resulting in the formation of n at the edge of the PN junction - A virtual guard ring to avo...

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Abstract

The invention requests to protect an equivalent circuit of a CMOS SPAD device, which mainly includes P+ / center N well junction impedance, P+ / N well junction impedance on both sides inside the device, center N well / P substrate junction impedance, pad impedance and so on. The current source is added into the equivalent circuit to simulate the motion of photogenerated carriers inside the device.The P+ / center N well junction impedance can be divided into multiplication region impedance and drift region impedance, Ra, La, Rl represent multiplication region impedance, Rd and Rs represent drift region impedance. Because there is a 90 degree phase delay of the AC conduction current in the multiplication region relative to the AC voltage, an inductor La component exists in the multiplicationregion; a capacitor C represents the junction capacitor of P+ / center N well. The P+ / N well junction impedance on both sides inside the device is replaced by a capacitor C p+ / n-well and a resistorR p+ / n-well in series. In addition to a resistor Rwell of an N well region and a junction capacitor Csub1 of the center N well / P substrate included, a capacitor Csub2 and a resistor Rsub in the parallel mode are also included in the center N well / P substrate junction impedance.

Description

technical field [0001] The invention belongs to the technical field of single photon detection, relates to the photoelectric performance analysis of a SPAD optoelectronic device, and in particular relates to the equivalent circuit model design of a CMOS SPAD optoelectronic device. Background technique [0002] Single Photon Avalanche Diode (Single Photon Avalanche Diode), also known as SPAD, is an avalanche photodiode (Avalanche Photodiode) working in Geiger mode (working voltage greater than breakdown voltage). Since SPAD works in Geiger mode and can detect a single photon, the device has great potential in automotive LIDAR systems, proton emission spectroscopy (PET), photon and quantum communication technology, fluorescence lifetime imaging, and three-dimensional imaging technology. application prospects. [0003] The device structure of CMOSSPAD can be divided into two categories according to the type of its guard ring. One is a diffused guard ring structure, that is, a...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/0352H01L29/06
Inventor 王巍王广王伊昌周凯利曾虹谙王冠宇
Owner CHONGQING UNIV OF POSTS & TELECOMM
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