Microelectrode capable of inhibiting optical noise, circuit adopting microelectrode and preparation method of circuit
A micro-electrode and optical noise technology, applied in the field of micro-sensors, can solve the problems of silicon-based micro-electrode optical noise, etc., and achieve the effects of eliminating signal interference, good flexibility, and improving signal-to-noise ratio.
Active Publication Date: 2019-06-21
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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[0004] In order to at least partly solve the optical noise problem of the above-mentioned silicon-based microelectrode, the present invention proposes a silicon-based microelectrode structure that can suppress optical noise
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[0043] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions in the specification, similar or identical parts use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while the present disclosure may provide illustrations of parameters comprising particular values, it should be understood that parameters need not be exactly equal to corresponding values, but may approximate corresponding values within acceptable error margins or design constraints.
[0044] The electrode for suppressing optical noise of the present invention mainly uses the method of grounding "drainage" to collect the unbalanced minority carriers gene...
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Abstract
The invention discloses a microelectrode capable of inhibiting optical noise, a circuit adopting the microelectrode and a preparation method of the microelectrode. In a microelectrode structure takingsilicon as a supporting material, silicon serving as a substrate can generate unbalanced carriers due to illumination, so that electrode signals on the upper layer of the substrate are disturbed. A silicon substrate serving as an electrode support is grounded by doping and growing a metal layer and etching a through hole in an insulating layer on the metal layer, so that the signal interference of photon-generated carriers in the silicon substrate on an upper neural electrode can be greatly reduced or eliminated, and the noise interference of light on a silicon-based microelectrode, particularly a lightly-doped silicon substrate, is effectively solved.
Description
technical field [0001] The invention relates to the technical field of microsensors, in particular to a microelectrode capable of suppressing optical noise, a circuit using the same and a preparation method thereof. Background technique [0002] Silicon-based microelectrode is an important tool for neuroscience research. Silicon is usually used as the substrate to play a supporting role in the device. The upper layer is the traditional "sandwich" electrode structure of insulating layer, metal conductor, insulating layer, silicon substrate and metal The electrodes are separated by an insulating layer, as shown in the schematic diagram figure 2 . [0003] Since the size of the microelectrode is very small, usually its lateral dimension is on the order of tens to hundreds of microns, the recorded signal is very weak. During the use of silicon-based microelectrodes, due to the sensitivity of the silicon substrate to light, the non-equilibrium carriers generated by light in the...
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IPC IPC(8): B81B7/00B81B7/02B81C1/00
Inventor 裴为华王飞刘智多邢潇陈弘达
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI